Transient hot-electron effect on n-channel device degradation (MOSFETs)

Wang, Huamin; Davis, M.; De, Han; Bibyk, S.; Nissan-Cohen, Y.

doi:10.1109/iedm.1989.74232

Cited by 16 publications

(1 citation statement)

References 6 publications

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“…The remarkably enhanced device degradation with the case of small output load can be explained by the transient hole injection during the turn-off time of the gate pulse in the period of gate falling edge [4], [SI. In the case of the inverter-type stress, the transient hot-carrier injection during the gate falling time has caused more severe device degradation than during the gate rising time [4], [5]. We have also observed such phenomena in the transistors under dynamic stress (not reported here).…”

Section: Hot-carrier Effects In Transistorssupporting

confidence: 55%

Hot-carrier-induced circuit degradation in actual DRAM

Huh

Yang

Shin

et al. 1995

33rd IEEE International Reliability Physics Symposium

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The hot-carrier effects on DRAM have been evaluated thoroughly by investigating the performance degradation of each constituent circuit as a result of component transistor aging in a 64Mb DRAM. The mechanism how the overall circuit performance is affected by unit transistor aging and which transistors cause most critical circuit performance failures is discussed. It was found that hot-carrier-induced transistor aging in the circuit block did not directly affect the speed degradation, but instead, seriously reduced the design margin of the analog circuit. The circuit performance degradation caused by hot-carrier stress depended more on the circuit structure including output loading rather than the voltage level. In addition, on-chip hotcarrier stresshest patterns were also used to investigate the influence of different output loads of inverter on the dynamic hot-carrier degradation. It was found that the inverter with heavy output load showed less degradation in comparison to the inverter with small load.

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Section: Hot-carrier Effects In Transistorssupporting

confidence: 55%