Absbuct-Highfield endurance of reolddiud-oitrided oxide @NU), and fluorinated oxide (pox) under dynamic Fowkr-Nordheln strm were compared with that of conventional oxide. Timedependent dielectric breakdown (TDDB) of RNU and FOX is & o m to be strongly dependent on frequency, m d lifetime under high frequency stress is longer relative to that under DC stress. RNU and FOX display interface hardness under high field iojection at all frequencies.hterface trap generation is not a stroog function of frequency in any of tbe oxides studied. Examination of charge bapping indicates that frequencydependent hole trapping is responsible for the frequency dependence of TDDB.
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