Suppression of boron penetration in p/sup +/ polysilicon gate P-MOSFETs using low-temperature gate-oxide N/sub 2/O anneal

Comparison of electrical characteristics for SiONx and HfZrOx gate dielectrics of MOSFETs with decoupled plasma nitridation treatment

“…When the subthreshold swing was extracted, the S.S. value of HK nMOSFET was greater than that of SiON x one due to the transportation of electron carrier. Reversely, the S.S. value of HK pMOSFET is less than that of SiON x one because the last exhibited some boron penetration [38][39][40] from gate electrode to p-channel surface, as shown in Figs. 5 and 6.…”

Properties of non‐stoichiometric nitrogen doped LPCVD silicon thin films

“…It has been shown, however, that the structure of layers formed can vary drastically with increasing nitrogen level doping in silicon from non-stoichiometric SiN x films to the very known silicon nitride (Si 3 N 4 ) [4]. For this reason, nitrogen doped silicon films found a various application not only in microelectronic systems, but also in optical filter fabrication [5,6] and microelectromechanical devices [4]. In the bilayer structure of CMOS polysilicon gate, nitrogen level doping must be carefully optimized because of the aptitude of this impurity to the non-suitable increase of the total resistance of the gate [7][8][9].…”

Influence of thickness on the material characteristics of reactively sputtered W2N layer and electrical properties of W/W2N/SiO2/Si capacitors

“…Owing to the continuous down-scaling of gate length and gate oxide thickness in complementary metal-oxide-semiconductor (CMOS) devices, the conventional polycrystalline silicon gate electrodes suffer several problems, including high gate resistance, gate depletion and boron penetration from the p + -doped polycrystalline silicon into the channel region [1][2][3]. In order to circumvent these problems, metals and metal nitrides are employed as gate electrodes.…”