We demonstrate InGaAs multigate MOSFETs, so-called FinFETs. The lateral nanowires constituting the channel in these devices have been formed using selective area regrowth, where the surfaces of the nanowires are crystallographic planes. L g = 32 nm devices exhibit peak transconductance of 1.8 mS/μm at V ds = 0.5 V. We also report on RF characterization of these devices. A small-signal hybrid-π model is developed, which includes both the effect of impact ionization and border traps and shows good fit to measurement data. Simultaneously extracted f t and f max are 280 and 312 GHz, respectively, which are the highest reported values of any III-V multiple-gate MOSFET.

An important source of degradation in thin dielectric material layers is the generation and migration of oxygen vacancies. We investigated the formation of Frenkel pairs (FPs) in HfO 2 as the first structural step for the creation of new defects as well as the migration of preexisting and newly built oxygen vacancies by nudged elastic band (NEB) calculations and stress induced leakage current (SILC) experiments. The analysis indicates, that for neutral systems no stable intimate FPs are built, whereas for the charge states q ¼ AE 2 FPs are formed at threefold and at fourfold coordinated oxygen lattice sites. Their generation and annihilation rate are in equilibrium according to the Boltzmann statistics. Distant FPs (stable defects) are unlikely to build due to high formation energies and therefore cannot be accounted for the measured gate leakage current increase of nMOSFETs under constant voltage stress. The negatively charged oxygen vacancies were found to be very immobile in contrast to positively charged V 0 's with a low migration barrier that coincides well with the experimentally obtained activation energy. We show that rather the activation of preexisting defects and migration towards the interface than the defect generation are the cause for the gate oxide degradation.

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Off-state drain leakage current has been investigated for InGaAs-based metal-oxide-semiconductor field-effect transistors with different drain configurations, InGaAs, and InP, respectively. The introduction of an InP drain presents a lower leakage current compared to InGaAs drain devices. From temperature dependent measurements, the leakage current mechanisms have been differentiated, and the role of drain direct band-to-band tunneling, as well as gate-induced drain leakage, has been identified.

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In this paper we present a detailed investigation on the influence of carbon co-implantation in the source/drain extension on leakage current and defect density in PFET transistors. Carbon is used to reduce the transient enhanced boron diffusion, to decrease short channel effects and to control the overlap length of the transistor. Leakage currents are measured and separated in order to analyze the influence of the carbon on the different MOSFET regions. An increase in carbon dose by a factor of 1.15 leads to an enhanced source/drain extension leakage which is caused by carbon induced defects. No effect of the carbon implantation on source/drain junction leakage was found as the co-implant is located above the source/drain depletion region. In addition an increase of gate induced drain leakage with carbon dose was observed. This increase is further analyzed by charge pumping technique. ©2010 IEEE

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