Leakage current and defect characterization of p+n-source/drain diodes

Roll, Guntrade; Goldbach, M.; Frey, L.

doi:10.1016/j.microrel.2011.05.015

Cited by 7 publications

(3 citation statements)

References 19 publications

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“…As expected the channel leakage or trap density is not affected by the carbon implant. Source/Drain Leakage The S/D leakage reveals thermal assisted tunneling via defects with a trap energy of 0.61eV, fitted for an effective mass of 0.16 of the electron mass [7,8]. Previous studies [7] indicate that the S/D leakage is not affected by the carbon implant, because the carbon is located above the S/D depletion region.…”

Section: Channel Leakagementioning

confidence: 93%

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Carbon junction implant: Effect on leakage currents and defect distribution

Roll

Jakschik

Goldbach³

et al. 2010

2010 Proceedings of the European Solid State Device Research Conference

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In this paper we present a detailed investigation on the influence of carbon co-implantation in the source/drain extension on leakage current and defect density in PFET transistors. Carbon is used to reduce the transient enhanced boron diffusion, to decrease short channel effects and to control the overlap length of the transistor. Leakage currents are measured and separated in order to analyze the influence of the carbon on the different MOSFET regions. An increase in carbon dose by a factor of 1.15 leads to an enhanced source/drain extension leakage which is caused by carbon induced defects. No effect of the carbon implantation on source/drain junction leakage was found as the co-implant is located above the source/drain depletion region. In addition an increase of gate induced drain leakage with carbon dose was observed. This increase is further analyzed by charge pumping technique. ©2010 IEEE

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Section: Channel Leakagementioning

confidence: 93%

“…Thermal generation, direct band to band tunneling, thermal assisted tunneling via defects, and Frenkel-Poole current are possible leakage mechanisms. References [7], and [8] present methods to separate the different mechanisms using the activation energy.…”

Section: B Source/drain- Sde-and Channel Leakagementioning

confidence: 99%

Carbon junction implant: Effect on leakage currents and defect distribution

Roll

Jakschik

Goldbach³

et al. 2010

2010 Proceedings of the European Solid State Device Research Conference

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“…Since the Si substrate had good conductivity, it is assumed that the series resistance measured was due to conduction perpendicularly through the GaN layer. Since reverse leakage current is often due to defects [23], the difference might be due to the material in Sample a having better quality due to the slower growth rate. The cracks in Sample b may also give rise to regions of lower barrier height, which would increase the reverse leakage current.…”

Section: Electrical Characterizationmentioning

confidence: 99%

Electrical characterization of Au/Ni Schottky contacts on GaN synthesized using electrodeposition

Ali

Omotoso²,

Nel³

et al. 2023

Semicond. Sci. Technol.

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Gallium nitride thin films have attracted attention due to their prospects in semiconductor devices and technology. In this study, we investigate the electrical properties and perform deep level transient spectroscopy (DLTS) on Au/Ni Schottky diodes fabricated on gallium nitride thin films that were synthesized by electrodeposition on a Si (111) substrate from a solution containing gallium nitrate (Ga(NO3)3) and ammonium nitrate (NH4(NO3)) using current densities of 1 and 3 mA/cm2. The thin films were found to crystalize in the wurtzite hexagonal structure with crystallite sizes of approximately 20 nm. Scanning electron microscopy and atomic force microscopy were used to characterize the microstructure of the GaN thin films. The Schottky diodes had good rectifying properties, corresponding to n-type material. The diodes had a IV barrier heights of 0.76 eV and 0.60 eV; a CV barrier heights of 0.92 eV and 0.71 eV; and carrier densities of 1.2 × 1016 cm-3, and 1.7 × 1016 cm-3, for material deposited under 1 mA/cm2 and 3 mA/cm2, respectively. By fitting a model taking both thermionic emission as well as conduction through the polycrystalline bulk into account, it was found that the grain boundary potential of the GaN crystallites was 0.29 V. The DLTS study revealed different dominant DLTS peaks in each as-grown sample with activation energies of 0.49 and 0.48 eV with capture cross-sections of 9 × 10-15 and 4 × 10-16 cm2, in the material grown under 1 mA/cm2 and 3 mA/cm2 current density, respectively. The defects seem to be similar to defects found in heavily damaged GaN and GaN grown on highly mismatched or cracked substrates, and are probably not simple defects.

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