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In this paper, we solved Poisson equation in cylindrical coordinates using approximations to obtain a compact model for the drain current of long-channel junctionless gate-all-around MOSFETs. The resulting model is analytical, explicit, and valid for depletion and accumulation, and consists of simple physically based equations, for better understanding of this device, and also easier implementation and better computation speed as a compact model. The agreement with TCAD simulations is very good.

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Characterization of effective mobility by split C(V) technique in N-MOSFETs with ultra-thin gate oxides

Lime

Guiducci

Clerc

et al. 2003

Solid-State Electronics

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A simple compact model for long-channel junctionless Double Gate MOSFETs

Lime

Santana

Iñı́guez

2013

Solid-State Electronics

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Experimental and comparative investigation of low and high field transport in substrate- and process-induced strained nanoscaled MOSFETs

Andrieu

Ernst

Lime³

et al.

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75 nm damascene metal gate and high-k integration for advanced CMOS devices

Guillaumot

Garros

Lime

et al.

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F. Lime

A Quasi-Two-Dimensional Compact Drain–Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel Effects

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A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part I: DC Characteristics

Characterization of effective mobility by split C(V) technique in N-MOSFETs with ultra-thin gate oxides

A simple compact model for long-channel junctionless Double Gate MOSFETs

Experimental and comparative investigation of low and high field transport in substrate- and process-induced strained nanoscaled MOSFETs

75 nm damascene metal gate and high-k integration for advanced CMOS devices

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