Characterization of effective mobility by split C(V) technique in N-MOSFETs with ultra-thin gate oxides

Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge

“…The mobility was extracted from the split capacitance-voltage ͑C-V͒ technique at room temperature. 14 For low temperature measurements, the Y function method was used for mobility extraction. 15 The interface state density was calculated from the maximum charge pumping current after the leakage current correction.…”

“…The QM C-V simulator uses the modified Van Dort analytical model to account for QM effects. 14 The measurements were performed on wafer in a microchamber controlled environment ͑Cascade Microtech Summit 12971B͒ using an Agilent B1500. The low temperature measurements were carried out in a Suss MicroTec cryoprober.…”

“…At room temperature, the effective mobility can be determined by using the split C-V method. 14 Figure 5 shows the reciprocal of the peak effective mobility of n-MOSFETs as function of N f + D it ͑Q inv ϳ 6 ϫ 10 12 cm −2 ͒. We can see from Figs.…”

“…The Y function method yields low field mobility from direct parameter extraction using I d ͑V g ͒ characteristics in strong inversion. 14,15 The corresponding effective mobility at a given surface inversion charge density can be determined using the first and second order mobility attenuation factors, as shown in Eq. ͑3͒,…”

Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics

“…However, as the gate dielectric is thinned, the amplitude of the semiconductor surface asperities at the dielectric interface becomes a larger proportion of the total dielectric thickness hence 2 nd order effects become non-negligible. The model in equation 3 was shown to account more accurately for mobility degradation in thin gate dielectric MOSFETs and has been used in other studies [16][17][18]. In this paper, the linearity of strained Si nMOSFETs is assessed, the 2 nd order MDF (θ 2 ) is extracted for 2.5 nm thick oxides and a MOSFET model is used to assess the importance of θ 2 in the predictive modelling of linearity for CMOS devices.…”