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The paper reports about the technology platform for the fabrication of RF-MEMS devices developed at FBK. The most important process features, requirements and possible applications are presented and described. The basic fabrication process, together with some of the more important process variations and its capabilities are reported. Finally, some examples of produced devices and their performances are briefly presented.

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A K-band RF-MEMS uniplanar second-order bandpass filter with\ud reconfigurable bandwidth is presented. The filter is based on inductively-coupled\ud half-wavelength slotline resonators and CPW-slotline\ud multimodal immittance inverters (MIIs). The coupling inductance\ud and the MII length are reconfigured using RF-MEMS ohmic-contact\ud switches. Experimental results show a 3 dB relative-bandwidth\ud change from 4.5 to 8.5% (maintaining a Butterworth response), and\ud insertion losses of 5.2 and 3.7 dB for either state.Peer ReviewedPostprint (published version

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