Controlling stress and stress gradient during the release process in gold suspended micro-structures

Mulloni, Viviana; Giacomozzi, F.; Margesin, B.

doi:10.1016/j.sna.2010.06.013

Cited by 47 publications

(37 citation statements)

References 8 publications

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“…These include acoustic MEMS, optical MEMS and Radio Frequency MEMS (RF-MEMS) [6]. RF MEMS operate in the electromagnetic wave frequencies in the 3 kHz -300 GHz range [7][8]. This frequency provides maximized efficiency in the circuitry and ability to flow through paths containing insulating material, such as the dielectric insulators of capacitors.…”

Section: Maintaining the Integrity Of The Specificationsmentioning

confidence: 99%

Design and Simulation of an RF-MEMS Switch and analysis of its Electromagnetic aspect in realtion to stress

Riaz¹,

Sindhu²,

Zaidi³

2018

Adv. sci. technol. eng. syst. j.

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Section: Maintaining the Integrity Of The Specificationsmentioning

confidence: 99%

Design and Simulation of an RF-MEMS Switch and analysis of its Electromagnetic aspect in realtion to stress

Riaz¹,

Sindhu²,

Zaidi³

2018

Adv. sci. technol. eng. syst. j.

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“…The assumption of linear stress distribution, i.e. constant stress gradient, is frequently employed in the literature [10,14,[16][17][18], which is especially proper for very thin films such as the 1-lm-thick nickel film of this study:…”

Section: Residual Stress Gradients and Their Characterizationmentioning

confidence: 99%

Residual stress gradients in electroplated nickel thin films

Kilinc

Ünal

Alaca

2015

Microelectronic Engineering

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“…Temperature may induce a relaxation effect on the residual stress (Epp 2011;Medvedeva et al 2011). Therefore after few thermal loading cycles residual stress effect may look vanishing as in (Margesin et al 2003;Mulloni et al 2010). This fact may motivate even significant differences in pull-in and pull-out values after a defined period.…”

Section: Residual Stress and Mechanical Couplingmentioning

confidence: 99%

Role of the electro-thermo-mechanical multiple coupling on the operation of RF-microswitch

Brusa

Munteanu

2012

Microsyst Technol

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A phenomenological approach is proposed to identify some effects occurring within the structure of the microswitch conceived for radio frequency application. This microsystem is operated via a nonlinear electromechanical action imposed by the applied voltage. Unfortunately, it can be affected by residual stress, due to the microfabrication process, therefore axial and flexural behaviors are strongly coupled. This coupling increases the actuation voltage required to achieve the so-called ''pull-in'' condition. Moreover, temperature may strongly affect strain and stress distributions, respectively. Environmental temperature, internal dissipation of material, thermo-elastic and Joule effects play different roles on the microswitch flexural displacement. Sometimes buckling phenomenon evenly occurs. Literature show that all those issues make difficult an effective computation of ''pull-in'' and ''pull-out'' voltages or evenly distinguishing the origin of some failures detected in operation. Analysis, numerical methods and experiments are applied to an industrial test case to investigate step by step the RF-microswitch operation. Multiple electro-thermomechanical coupling is first modeled to have a preliminary and comprehensive description of the microswitch behavior and of its reliability. ''Pull-in'' and ''pull-out'' tests are then performed to validate the proposed models and to find suitable criteria to design the RF-MEMS.

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Controlling stress and stress gradient during the release process in gold suspended micro-structures

Cited by 47 publications

References 8 publications

Design and Simulation of an RF-MEMS Switch and analysis of its Electromagnetic aspect in realtion to stress

Design and Simulation of an RF-MEMS Switch and analysis of its Electromagnetic aspect in realtion to stress

Residual stress gradients in electroplated nickel thin films

Role of the electro-thermo-mechanical multiple coupling on the operation of RF-microswitch

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