CAS 2011 Proceedings (2011 International Semiconductor Conference) 2011
DOI: 10.1109/smicnd.2011.6095744
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A flexible technology platform for the fabrication of RF-MEMS devices

Abstract: The paper reports about the technology platform for the fabrication of RF-MEMS devices developed at FBK. The most important process features, requirements and possible applications are presented and described. The basic fabrication process, together with some of the more important process variations and its capabilities are reported. Finally, some examples of produced devices and their performances are briefly presented.

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Cited by 38 publications
(45 citation statements)
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“…Figure shows the proposed LC resonator. It consists of the series of a spiral inductor and a varactor, both designed to be fabricated by using the FBK‐irst MEMS process [ Giacomozzi et al ., ]. The bonding wire interconnections with the active part of the VCO have been also included in the model since they are the main responsible of the shift of the resonance frequency of the circuit.…”
Section: Resonator Geometrymentioning
confidence: 99%
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“…Figure shows the proposed LC resonator. It consists of the series of a spiral inductor and a varactor, both designed to be fabricated by using the FBK‐irst MEMS process [ Giacomozzi et al ., ]. The bonding wire interconnections with the active part of the VCO have been also included in the model since they are the main responsible of the shift of the resonance frequency of the circuit.…”
Section: Resonator Geometrymentioning
confidence: 99%
“…are polarized. They are made by the stuck of the thin metal and insulating layers available in the standard process [ Giacomozzi et al ., ], such as polysilicon, TiN/Ti/Al/Ti/TiN multimetal, and gold for a total height of about 1.2 µm.…”
Section: Resonator Geometrymentioning
confidence: 99%
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“…The switches were fabricated by FBK using a combination of CMOS and micromachining processes on 200-μm thick high-resistivity silicon [9]. With respect to the devices presented in [7], the new SP4Ts dies are provided with 0-level package.…”
Section: Modeling and Designmentioning
confidence: 99%
“…The switches were manufactured by FBK on 200µm thick HR Silicon substrates. An 8 mask level process has been used which allows the fabrication of capacitive and ohmic MEMS switches together with passive components on the same substrate [5]. A device yield of about 80% could be achieved.…”
Section: Introductionmentioning
confidence: 99%