The paper reports about the technology platform for the fabrication of RF-MEMS devices developed at FBK. The most important process features, requirements and possible applications are presented and described. The basic fabrication process, together with some of the more important process variations and its capabilities are reported. Finally, some examples of produced devices and their performances are briefly presented.
RF-MEMS technology is emerging as a key enabling solution to address demanding requirements that upcoming 5G standards pose upon passive devices and networks. In this work, we demonstrate experimentally-to the best of our knowledge, for the first time-, RF-MEMS 2-state basic attenuator modules, from nearly-DC up to 110 GHz. Physical samples are realized in the CMM-FBK RF-MEMS technology, and design variations are tested. Resistive loads are placed in series or shunt configuration on the RF line, and the attenuation is ON/OFF switched by electrostatically driven MEMS micro-relays. Tested devices show attenuation levels (S21) from-5 dB to-10 dB, depending on the resistive load, with flatness of 2-3 dB from 10 MHz to 50 GHz and of around 2 dB from 60 GHz up to 110 GHz. When OFF, the attenuator modules introduce loss (S21) better than-1 dB up to 50 GHz and better than-6 dB up to 110 GHz
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