The silicon surface texture significantly affects the current density and efficiency of perovskite/silicon tandem solar cells. However, only a few studies have explored fabricating perovskite on textured silicon and the effect of texture on perovskite films because of the limitations of solution processes. Here we produce conformal perovskite on textured silicon with a dry two-step conversion process that incorporates lead oxide sputtering and direct contact with methyl ammonium iodide. To separately analyze the influence of each texture structure on perovskite films, patterned texture, high-resolution photoluminescence (μ-PL), and light beam-induced current (μ-LBIC), 3D mapping is used. This work elucidates conformal perovskite on textured surfaces and shows the effects of textured silicon on the perovskite layers with high-resolution 3D mapping. This approach can potentially be applied to any type of layer on any type of substrate.

The efficiency of silicon solar cell with poly-Si/SiOx passivating contact was improved by etching of poly-Si which improves short circuit current density without affecting passivation quality and fill factor.

Recently, titanium oxide has been widely investigated as a carrier-selective contact material for silicon solar cells. Herein, titanium oxide films were fabricated via simple deposition methods involving thermal evaporation and oxidation. This study focuses on characterizing an electron-selective passivated contact layer with this oxidized method. Subsequently, the SiO2/TiO2 stack was examined using high-resolution transmission electron microscopy. The phase and chemical composition of the titanium oxide films were analyzed using X-ray diffraction and X-ray photoelectron spectroscopy, respectively. The passivation quality of each layer was confirmed by measuring the carrier lifetime using quasi-steady-state photoconductance, providing an implied open circuit voltage of 644 mV. UV–vis spectroscopy and UV photoelectron spectroscopy analyses demonstrated the band alignment and carrier selectivity of the TiO2 layers. Band offsets of ~0.33 and ~2.6 eV relative to the conduction and valence bands, respectively, were confirmed for titanium oxide and the silicon interface.

In this work, nickel silicide was applied to tandem solar cells as an interlayer. By the process of thermal evaporation, a layer of NiOx, hole transport layer (HTL) was deposited on n+ poly-Si layer directly. Nickel silicide was simultaneously formed by nickel diffusion from NiOx to n+ poly-Si layer during the deposition and annealing process. The I–V characteristics of NiOx/n+ poly-Si contact with nickel silicide showed ohmic contact and low contact resistivity. This structure is expected to be more advantageous for electrical connection between perovskite top cell and TOPCon bottom cell compared to the NiOx/TCO/n+ poly-Si structure showing Schottky contact. Furthermore, nickel silicide and Ni-deficient NiOx thin film formed by diffusion of nickel can improve the fill factor of the two sub cells. These results imply the potential of a NiOx/nickel silicide/n+ poly-Si structure as a perovskite/silicon tandem solar cell interlayer.

Monolithic perovskite–silicon tandem solar cells with MoOx hole selective contact silicon bottom solar cells show a power conversion efficiency of 8%. A thin 15 nm-thick MoOx contact to n-type Si was used instead of a standard p+ emitter to collect holes and the SiOx/n+ poly-Si structure was deposited on the other side of the device for direct tunneling of electrons and this silicon bottom cell structure shows ~15% of power conversion efficiency. With this bottom carrier selective silicon cell, tin oxide, and subsequent perovskite structure were deposited to fabricate monolithic tandem solar cells. Monolithic tandem structure without ITO interlayer was also compared to confirm the role of MoOx in tandem cells and this tandem structure shows the power conversion efficiency of 3.3%. This research has confirmed that the MoOx layer simultaneously acts as a passivation layer and a hole collecting layer in this tandem structure.

Perovskite-based tandem solar cells are promising candidates for industrial applications. This study demonstrated perovskite/silicon tandem devices based on a conventional Si homojunction device configuration employing a tunnel oxide passivating contact to improve the voltage. Moreover, we fabricated it without the deposition of a recombination layer on a large area while showing the possibility of applying the industry market. This solar cell exhibited a power conversion efficiency of 17.3% and a high voltage of 1783 mV on a 25 cm2 active area.

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Current density plays a substantial role in monolithic tandem solar cells; however, it is difficult to control because subcells and auxiliary layers are stacked and serially connected vertically to obtain higher voltages. The vertically stacked structure intrinsically triggers inevitable parasitic absorption. In current typical perovskite/silicon two-terminal (2-T) tandem solar cells, 5−10 layers are placed on the light path, even though they are not current generating layers. These layers usually include transparent window layers, buffer layers, carrier extraction layers, and recombination layers. Therefore, the development of top contact-free architectures to reduce parasitic absorption in 2-T tandem solar cells is required for achieving high efficiency. In this study, a top contact-free perovskite/silicon 2-T tandem solar cell with quasi-interdigitated intermediate electrodes (Q-IDIEs) is reported for the first time. Several layers placed above the perovskite layer in conventional devices are relocated to the backside of the perovskite. The Q-IDIE, composed of a patterned Ni/NiO X shell above the full-deposited TiO 2 , was fabricated by the following processes: photolithography, lift-off, and oxidation. The device results in 4.23% efficiency with an open-circuit voltage of 1.54 V. This tandem architecture is expected to be a breakthrough for overcoming the theoretical efficiency limit of single-junction solar cells with further optimization.