Monolithic Perovskite-Carrier Selective Contact Silicon Tandem Solar Cells Using Molybdenum Oxide as a Hole Selective Layer

Song, Hoyoung; Lee, Changhyun; Hyun, Jiyeon; Lee, Sang Won; Choi, Dongjin; Pyun, Dowon; Nam, Jiyeon; Jeong, Seok Hyun; Kim, Jiryang; Bae, Soohyun; Lee, Hyunju; Kim, Dong Hwan; Lee, Haeseok

doi:10.3390/en14113108

Cited by 8 publications

(6 citation statements)

References 46 publications

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“…To optimize the boron doping profile, cell characteristics with different interdiffusion amounts were simulated using QUOKKA to set the standard profile. 48,49 The doping concentration in poly-Si must be high for high field-effect passivation; however, it cannot exceed the solubility limit. [38][39][40]43 In addition, the depth of the indiffused region must be reduced.…”

Section: Simulation Resultsmentioning

confidence: 99%

Boron‐doped polysilicon using spin‐on doping for high‐efficiency both‐side passivating contact silicon solar cells

Park

Kim

Choi

et al. 2022

Progress in Photovoltaics

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This study focuses on boron‐doped p+polysilicon (poly‐Si) passivating contacts using spin‐on doping (SOD). Experimental conditions, including annealing conditions, SOD concentration, and poly‐Si thickness, were controlled to improve passivation. Based on the analysis results, the passivation quality mainly changes with indiffusion and doping concentration, causing Auger recombination and field effects. Meanwhile, grain size also influences the passivation quality but showed marginal characteristics. Through further optimization using an etch back and diffusion barrier, the efficiency of the flat reference solar cell was improved to 17.5% with an open‐circuit voltage of 695 mV using a p+ poly‐Si contact emitter, the highest reported efficiency using SOD on saw‐damage‐etched surfaces. This study includes a detailed analysis of SOD p+ poly‐Si and shows promising results with potential for application in tandem devices. Furthermore, the cell efficiency is expected to increase by controlling the doping profile and application of textured surfaces, selective emitters, and forming gas annealing (FGA).

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Section: Simulation Resultsmentioning

confidence: 99%

Boron‐doped polysilicon using spin‐on doping for high‐efficiency both‐side passivating contact silicon solar cells

Park

Kim

Choi

et al. 2022

Progress in Photovoltaics

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“…Additionally, in their study, Davis and Strandwitz used MoO x layers of 4 nm, as layers of 10 nm MoO x in direct contact with silicon yield contact resistivities that were orders of magnitude higher than when 4 nm layers were used [91]. On the other hand, Song et al observed that for MoO x /c-Si/MoO x stacks, the i-V oc rose to a maximum of 630.3 mV as the thickness of the MoO x layers increased to 15 nm, which means that thicker MoO x layers (up to 15 nm) may result in better hole selectivity and electrical properties [93].…”

Section: Molybdenum Oxidementioning

confidence: 99%

Double Heterojunction Crystalline Silicon Solar Cells: From Doped Silicon to Dopant-Free Passivating Contacts

Wong

Pei

2022

Photonics

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Carrier-selective passivating contacts for effective electron and hole extraction are crucial to the attainment of high efficiency in crystalline silicon (Si) solar cells. In this comprehensive review, the principle of carrier extraction and recombination mechanisms in conventional industrial Si solar cells are discussed first. Passivating contacts based on (i) amorphous hydrogenated Si and (ii) polysilicon/silicon oxide are next reviewed, with emphasis on carrier selectivity mechanisms including contact layer band alignment with silicon, and localized carrier transport in ultrathin oxides. More recent developments in dopant-free passivating contacts deposited by lower-cost fabrication processes with lower thermal budget are then described. This third category of non-Si based electron- and hole-selective passivating contacts include transition metal oxides, alkali/alkali earth metal fluorides and organic conjugated polymers. The photovoltaic performance of asymmetric double heterojunction Si solar cells fabricated using these non-Si passivating contacts and their stability in damp heat conditions are discussed and compared with Si based passivating contacts.

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“…The concept of multijunction or tandem solar cells has been proposed to overcome the theoretical efficiency limits of single-junction solar cells. − As two or more absorber layers are stacked, it is possible to absorb and utilize a broader range of the solar spectrum. Among the various multijunction solar cells, a double-junction (or two-terminal, 2-T) solar cell combining silicon (Si) and perovskite is one of the most promising photovoltaic (PV) technologies. − As Si solar cells have been already commercialized, advanced Si technology and existing manufacturing lines can facilitate the commercialization of tandem solar cells. Perovskite solar cells are attracting attention as a partner of Si, owing to its band gap tunability, high absorption coefficient, high efficiency, and easy fabrication .…”

Section: Introductionmentioning

confidence: 99%

Titanium Silicide: A Promising Candidate of Recombination Layer for Perovskite/Tunnel Oxide Passivated Contact Silicon Two-Terminal Tandem Solar Cells

Pyun,

Choi,

Bae

et al. 2024

ACS Appl. Mater. Interfaces

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This study proposes a titanium silicide (TiSi2) recombination layer for perovskite/tunnel oxide passivated contact (TOPCon) 2-T tandem solar cells as an alternative to conventional transparent conductive oxide (TCO)-based recombination layers. TiSi2 was formed while TiO2 was made by oxidizing a Ti film deposited on the p+-Si layer. The reaction formation mechanism was proposed based on the diffusion theory supported by experimental results. The optical and electrical properties of the TiSi2 layer were optimized by controlling the initial Ti thicknesses (5–100 nm). With the initial Ti of 50 nm, the lowest reflectance and highly ohmic contact between the TiO2 and p+-Si layers with a contact resistivity of 161.48 mΩ·cm2 were obtained. In contrast, the TCO interlayer shows Schottky behavior with much higher contact resistivities. As the recombination layer of TiSi2 and the electron transport layer of TiO2 are formed simultaneously, the process steps become simpler. Finally, the MAPbI3/TOPCon tandem device yielded an efficiency of 16.23%, marking the first reported efficiency for a device including a silicide-based interlayer.

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Monolithic Perovskite-Carrier Selective Contact Silicon Tandem Solar Cells Using Molybdenum Oxide as a Hole Selective Layer

Cited by 8 publications

References 46 publications

Boron‐doped polysilicon using spin‐on doping for high‐efficiency both‐side passivating contact silicon solar cells

Boron‐doped polysilicon using spin‐on doping for high‐efficiency both‐side passivating contact silicon solar cells

Double Heterojunction Crystalline Silicon Solar Cells: From Doped Silicon to Dopant-Free Passivating Contacts

Titanium Silicide: A Promising Candidate of Recombination Layer for Perovskite/Tunnel Oxide Passivated Contact Silicon Two-Terminal Tandem Solar Cells

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