Transparent conductors and charge transport layers play a key role in the design and fabrication of efficient renewable energy and electronic devices. Over the years, Indium tin oxide (ITO), is...
The current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O), cupric oxide (CuO) and copper (III) oxide (Cu4O3) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion efficiency, η. Amongst the Cu2O heterojunction devices, a maximum η of 6.1% has been obtained by using pulsed laser deposition (PLD) of AlxGa1−xO onto thermal Cu2O doped with Na. The performance of CuO/n-Si heterojunction solar cells formed by magnetron sputtering of CuO is presently limited by both native oxide and Cu rich copper oxide layers at the heterointerface. These interfacial layers can be reduced by using a two-step sputtering process. A high η of 2.88% for CuO heterojunction solar cells has been achieved by incorporation of mixed phase CuO/Cu2O nanopowder. CuO/Cu2O heterojunction solar cells fabricated by electrodeposition and electrochemical doping has a maximum efficiency of 0.64% after surface defect passivation and annealing. Finally, early stage study of Cu4O3/GaN deposited on sapphire substrate has shown a photovoltaic effect and an η of ~10−2%.
Basic operational characteristics of the plasma focus are considered from design perspectives to develop powerful radiation sources. Using these ideas we have developed two compact plasma focus (CPF) devices operating in neon with high performance and high repetition rate capacity for use as an intense soft X-ray (SXR) source for microelectronics lithography. The NX1 is a four-module system with a peak current of 320 kA when the capacitor bank (7.8 F 2 4) is charged to 14 kV. It produces 100 J of SXR per shot (4% wall plug efficiency) giving at 3 Hz, 300 W of average SXR power into 4. The NX2 is also a four-module system. Each module uses a rail gap switching 12 capacitors each with a capacity of 0.6 F. The NX2 operates with peak currents of 400 kA at 11.5 kV into watercooled electrodes at repetition rates up to 16 Hz to produce 300 W SXR in burst durations of several minutes. SXR lithographs are taken from both machines to demonstrate that sufficient SXR flux is generated for an exposure with only 300 shots. In addition, flash electron lithographs are also obtained requiring only ten shots per exposure. Such high performance compact machines may be improved to yield over 1 kW of SXR, enabling sufficient exposure throughput to be of interest to the wafer industry. In deuterium the neutron yield could be over 10 10 neutrons per second over prolonged bursts of minutes.
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