Growth of γ-Al2O3 thin films on silicon by low pressure metal-organic chemical vapour deposition

Chemical Vapor Deposition

Esvan

et al. 2015

We present the direct liquid injection CVD of aluminum oxide and oxycarbide thin films using dimethylaluminum isopropoxide at high process temperature (500-700 8C) with the addition of O 2 gas, and at low temperature (150-300 8C) with the addition of H 2 O vapor. Very smooth films with typical roughness values lower than 2 nm are obtained. The thin films are composed of an amorphous material. The composition evolves as a function of temperature from that of a partial hydroxide to a stoichiometric oxide at low deposition temperature (150-300 8C), and from that of a stoichiometric oxide to a mixture of an oxide with an (oxy) carbide at higher temperature (500-700 8C).

Section: Introductionmentioning

confidence: 99%

A Process‐Structure Investigation of Aluminum Oxide and Oxycarbide Thin Films prepared by Direct Liquid Injection CVD of Dimethylaluminum Isopropoxide (DMAI)

Chemical Vapor Deposition

Esvan

et al. 2015

“…Nowadays, aluminum oxide, commonly referred to as alumina, is a key component of various products, devices, and equipment. For instance, alumina is extensively employed as a dielectric material in capacitors and other electrical devices, as substrate and furnace materials, filler in cosmetic formulations, hard coatings and soft abrasives, and as support for catalysis . The widespread use of alumina is intimately linked to the functional properties of its various crystallographic polymorphs (corundum, sapphire, gamma alumina, etc.)…”

Section: Introductionmentioning

confidence: 99%

Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties

Physica Status Solidi (a)

Thébault

et al. 2015

bilayer stacks are used as model systems to investigate the role of atomic layer deposition (ALD) and chemical vapor deposition (CVD) to prepare 30-180 nm thick amorphous alumina films as protective barriers for the medium temperature oxidation (500-600 8C) of titanium, which is employed in aeronautic applications. X-ray diffraction (XRD), transmission electron microscopy (TEM) with selected area electron diffraction (SAED), and X-ray photoelectron spectroscopy (XPS) results show that the films produced from the direct liquid injection (DLI) CVD of aluminum tri-isopropoxide (ATI) are poor oxygen barriers. The films processed using the ALD of trimethylaluminum (TMA) show good barrier properties but an extensive intermixing with Ti which subsequently oxidizes. In contrast, the films prepared from dimethyl aluminum isopropoxide (DMAI) by CVD are excellent oxygen barriers and show little intermixing with Ti. Overall, these measurements correlate the effect of the alumina coating thickness, morphology, and stoichiometry resulting from the preparation method to the oxidation barrier properties, and show that compact and stoichiometric amorphous alumina films offer superior barrier properties.

“…1 Introduction Alumina in the form of powders or coatings is a material of major technological interest for a wide range of applications in optical and microelectronic components, as well as a wear resistance agent and catalyst support, or for the protection against corrosion and high temperature oxidation [1][2][3]. The protection from corrosion and thermal oxidation of stainless steels, light alloys (Tiand Mg-based) and composite polymer materials for aero-nautic or automotive applications calls for the development of alumina thin films with superior performances to act as an oxidation barrier for moderate temperature applications (200-600 °C) [4,5].…”

mentioning

confidence: 99%

Alumina thin films prepared by direct liquid injection chemical vapor deposition of dimethylaluminum isopropoxide: a process‐structure investigation

Esvan

et al. 2015

Phys. Status Solidi C