Potential of NiOx/Nickel Silicide/n+ Poly-Si Contact for Perovskite/TOPCon Tandem Solar Cells

Kim, Jiryang; Pyun, Dowon; Choi, Dongjin; Jeong, Seokhyeon; Lee, Changhyun; Hyun, Jiyeon; Lee, Haeun; Lee, Sang‐Won; Song, Hoyoung; Lee, Solhee; Kim, Dong Hwan; Lee, Hae‐Seok

doi:10.3390/en15030870

Cited by 6 publications

(8 citation statements)

References 36 publications

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“…In a 2T tandem cell with a p-i-n PSC top cell and a TOPCon bottom cell, a NiO x hole transporting layer (HTL) of PSCs was reported to be directly evaporated onto the top of the heavily P-doped n + poly-Si layer (Figure 4c and d). 72 It was found that nickel diffused from NiO x HTL to n + poly-Si during the thermal evaporation and subsequent annealing, giving rise to the formation of a nickel silicide interlayer. The NiO x /n + poly-Si contact with nickel silicide is an ohmic contact and demonstrates low contact resistivity, resulting in a better electrical connection between the two subcells and facilitating the recombination of two different types of carriers in the nickel silicide interlayer.…”

Section: And Perovskite/si Tandem Solar Cellsmentioning

confidence: 99%

“…The TOPCon structure of Si solar cells also offers a new opportunity for the connection with p-i-n PSCs and improvement of the performance of resultant tandem cells. In a 2T tandem cell with a p-i-n PSC top cell and a TOPCon bottom cell, a NiO x hole transporting layer (HTL) of PSCs was reported to be directly evaporated onto the top of the heavily P-doped n + poly-Si layer (Figure c and d) . It was found that nickel diffused from NiO x HTL to n + poly-Si during the thermal evaporation and subsequent annealing, giving rise to the formation of a nickel silicide interlayer.…”

Section: Different Structures Of Si Solar Cells and Perovskite/si Tan...mentioning

confidence: 99%

Section: Different Structures Of Si Solar Cells and Perovskite/si Tan...mentioning

confidence: 99%

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Perovskite/Silicon Tandem Solar Cells: Choice of Bottom Devices and Recombination Layers

et al. 2023

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Perovskite/silicon tandem solar cells have been intensively studied in recent years, and their efficiencies have rapidly increased owing to the numerous efforts in this field. A question about which type of silicon solar cell is the most suitable subcell in tandem devices emerges. Herein, three attractive silicon solar cells are summarized, including passivated-emitter rear-cell (PERC), tunnel oxide passivated contact (TOPCon), and heterojunction (HJT) cells. Their structures and features are elucidated for a clear understanding of the mechanism and potential of optimum performance. Moreover, the characteristics and performance of perovskite/silicon tandem cells with PERC, TOPCon, and HJT subcells are contrasted and discussed. The significant contribution of the passivation layer and structure design on both sides to photovoltaic properties of tandem devices is emphasized. Especially, the recombination layer between two subcells is analyzed in depth in terms of material chemistry, light absorption, and charge transport with a review on preparing the optimized structure.

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Section: And Perovskite/si Tandem Solar Cellsmentioning

confidence: 99%

Section: Different Structures Of Si Solar Cells and Perovskite/si Tan...mentioning

confidence: 99%

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Perovskite/Silicon Tandem Solar Cells: Choice of Bottom Devices and Recombination Layers

et al. 2023

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“…This makes it possible to absorb and utilize a broader range of the solar spectrum. For double-junction solar cells using two light absorber layers, the theoretical efficiency can be increased up to 46% when materials with optimized band gaps are used for the top/bottom subcells. , Among various multijunction solar cells, perovskite/silicon two-terminal (2-T) tandem solar cells are most actively studied today; − while silicon solar cells have already been commercialized, perovskite solar cells are attracting attention as a next-generation technology that offers band gap tunability, easy fabrication, high absorption coefficient, and high efficiency . Owing to active research, perovskite/silicon 2-T tandem solar cells have shown more than a 2-fold efficiency increase, from 13.7% in 2015 to 31.25% in 2022 (EPFL/CSEM).…”

Section: Introductionmentioning

confidence: 99%

First Demonstration of Top Contact-Free Perovskite/Silicon Two-Terminal Tandem Solar Cells for Overcoming the Current Density Hurdle

Pyun

Lee

Kim

et al. 2023

ACS Appl. Energy Mater.

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Current density plays a substantial role in monolithic tandem solar cells; however, it is difficult to control because subcells and auxiliary layers are stacked and serially connected vertically to obtain higher voltages. The vertically stacked structure intrinsically triggers inevitable parasitic absorption. In current typical perovskite/silicon two-terminal (2-T) tandem solar cells, 5−10 layers are placed on the light path, even though they are not current generating layers. These layers usually include transparent window layers, buffer layers, carrier extraction layers, and recombination layers. Therefore, the development of top contact-free architectures to reduce parasitic absorption in 2-T tandem solar cells is required for achieving high efficiency. In this study, a top contact-free perovskite/silicon 2-T tandem solar cell with quasi-interdigitated intermediate electrodes (Q-IDIEs) is reported for the first time. Several layers placed above the perovskite layer in conventional devices are relocated to the backside of the perovskite. The Q-IDIE, composed of a patterned Ni/NiO X shell above the full-deposited TiO 2 , was fabricated by the following processes: photolithography, lift-off, and oxidation. The device results in 4.23% efficiency with an open-circuit voltage of 1.54 V. This tandem architecture is expected to be a breakthrough for overcoming the theoretical efficiency limit of single-junction solar cells with further optimization.

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“…For example, NiO is already established as p-type contact layer in metal halide perovskite solar cells, by delivering conversion efficiency values as high as 21% [24]. By having a p-type contact layer, NiO can potentially be used in a tunnel recombination junction in tandem silicon/perovskite cells, which has recently been demonstrated in the literature [25]. Here, we demonstrate the hydrogenation of poly-Si(n)/SiO 2 contacts from ALD NiO and provide insights into this hydrogenation process.…”

Section: Introductionmentioning

confidence: 99%

Effective Hydrogenation of Poly-Si Passivating Contacts by Atomic-Layer-Deposited Nickel Oxide

Phung

Helvoirt

Beyer³

et al. 2022

IEEE J. Photovoltaics

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In recent years, passivating contacts based on SiO 2 /poly-Si have proven to be an enabling technology for Si solar cells. Effective hydrogenation of the interfacial SiO 2 is vital for realizing efficient contacts. Hydrogen-rich dielectrics, such as SiN x and Al 2 O 3 , are commonly employed for hydrogenation, whereas also recently, n-type conductive oxides, such as In 2 O 3 :Sn and ZnO, have been demonstrated to yield excellent hydrogenation. This study presents the use of a p-type metal oxide, specifically NiO, as a suitable hydrogenation source. The p-type character of NiO makes it an interesting candidate for hydrogenation because of its potential use in selective contacting structures. Herein, we show that NiO, synthesized by atomic layer deposition (ALD), can be used to hydrogenate poly-Si/SiO 2 contacts effectively. Furthermore, we benchmark its hydrogenation performance to the established ALD ZnO/Al 2 O 3 stack and provide insights into the hydrogenation process. On planar surfaces, NiO yields almost as excellent results as ZnO/Al 2 O 3 stacks, whereas it lags behind on more challenging textured surfaces. Interestingly, even though elastic recoil detection analysis reveals that ALD NiO is rich in hydrogen, secondary ion mass spectrometry measurements show that, when NiO is compared to the ZnO/Al 2 O 3 stack, less hydrogen is present at the Si/SiO 2 interface after annealing. This is explained from effusion measurements, which show substantial effusion of hydrogen from NiO around 300 °C. Hence, Al 2 O 3 capping is further employed to prevent hydrogen loss and on textured wafers, the NiO/Al 2 O 3 stacks on poly-Si achieve an implied open-circuit voltage of 728 mV, confirming the excellent hydrogenation from ALD metal oxides.

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Potential of NiOx/Nickel Silicide/n+ Poly-Si Contact for Perovskite/TOPCon Tandem Solar Cells

Cited by 6 publications

References 36 publications

Perovskite/Silicon Tandem Solar Cells: Choice of Bottom Devices and Recombination Layers

Perovskite/Silicon Tandem Solar Cells: Choice of Bottom Devices and Recombination Layers

First Demonstration of Top Contact-Free Perovskite/Silicon Two-Terminal Tandem Solar Cells for Overcoming the Current Density Hurdle

Effective Hydrogenation of Poly-Si Passivating Contacts by Atomic-Layer-Deposited Nickel Oxide

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