Abstract:We have investigated the suitability of atomic layer deposition (ALD) for SiO 2 optical coatings and applied it to broadband antireflective multilayers in combination with HfO 2 as the high refractive index material. SiO 2 thin films were successfully grown using tris [dimethylamino]silane (3DMAS), bis [diethylamino]silane (BDEAS) with plasma activated oxygen as precursors, and the AP-LTO 330 precursor with ozone, respectively. The amorphous SiO 2 films show very low optical losses within a spectral range of 200 nm to 1100 nm. Laser calorimetric measurements show absorption losses of 300 nm thick SiO 2 films of about 1.5 parts per million at a wavelength of 1064 nm. The films are optically homogeneous and possess a good scalability of film thickness. The film surface porosity -which correlates to a shift in the transmittance spectra under vacuum and air conditions -has been suppressed by optimized plasma parameters or Al 2 O 3 sealing layers. and TiO 2 multilayers for applications as bandpass filters and antireflection coatings," Appl. Opt. 48(9), 1727-1732 (2009). 7. N. T. Gabriel, S. S. Kim, and J. J. Talghader, "Control of thermal deformation in dielectric mirrors using mechanical design and atomic layer deposition," Opt. Lett. 34(13), 1958-1960 (2009 4675-4685 (2012). 25. K. J. Hughes and J. R. Engstrom, "Nucleation delay in atomic layer deposition on a thin organic layer and the role of reaction thermochemistry," J.

The inverted p-i-n perovskite solar cells hold high promise for scale-up toward commercialization. However, the interfaces between the perovskite and the charge transport layers contribute to major power conversion efficiency (PCE) loss and instability. Here, we use a single material of 2-thiopheneethylammonium chloride (TEACl) to molecularly engineer both the interface between the perovskite and fullerene-C 60 electron transport layer and the buried interface between the perovskite and NiO x -based hole transport layer. The dual interface modification results in optimized band alignment, suppressed nonradiative recombination, and improved interfacial contact. A PCE of 24.3% is demonstrated, with open-circuit voltage (V oc ) and fill factor (FF) of 1.17 V and 84.6%, respectively. The unencapsulated device retains >97.0% of the initial performance after 1000 h of maximum power point tracking under illumination. Moreover, a PCE of 22.6% and a remarkable FF of 82.4% are obtained for a mini-module with an active area of 3.63 cm 2 .

In recent years, passivating contacts based on SiO 2 /poly-Si have proven to be an enabling technology for Si solar cells. Effective hydrogenation of the interfacial SiO 2 is vital for realizing efficient contacts. Hydrogen-rich dielectrics, such as SiN x and Al 2 O 3 , are commonly employed for hydrogenation, whereas also recently, n-type conductive oxides, such as In 2 O 3 :Sn and ZnO, have been demonstrated to yield excellent hydrogenation. This study presents the use of a p-type metal oxide, specifically NiO, as a suitable hydrogenation source. The p-type character of NiO makes it an interesting candidate for hydrogenation because of its potential use in selective contacting structures. Herein, we show that NiO, synthesized by atomic layer deposition (ALD), can be used to hydrogenate poly-Si/SiO 2 contacts effectively. Furthermore, we benchmark its hydrogenation performance to the established ALD ZnO/Al 2 O 3 stack and provide insights into the hydrogenation process. On planar surfaces, NiO yields almost as excellent results as ZnO/Al 2 O 3 stacks, whereas it lags behind on more challenging textured surfaces. Interestingly, even though elastic recoil detection analysis reveals that ALD NiO is rich in hydrogen, secondary ion mass spectrometry measurements show that, when NiO is compared to the ZnO/Al 2 O 3 stack, less hydrogen is present at the Si/SiO 2 interface after annealing. This is explained from effusion measurements, which show substantial effusion of hydrogen from NiO around 300 °C. Hence, Al 2 O 3 capping is further employed to prevent hydrogen loss and on textured wafers, the NiO/Al 2 O 3 stacks on poly-Si achieve an implied open-circuit voltage of 728 mV, confirming the excellent hydrogenation from ALD metal oxides.

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