Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 µm. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelling.

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We describe time-resolved chirp measurements in InAs∕InP quantum-dash optical amplifiers operating at 1550 nm. We highlight the roles of gain saturation and of the saturating pulse duration relative to the gain recovery time. Using 10Gbit∕s data, we demonstrate a low transient α parameter of less than one which causes negative chirp at the leading edge and positive chirp during the trailing edge of the input pulse.

We report spectrally resolved dynamical properties of 1550nm quantum-dash lasers. The dynamics are governed by the inhomogeneous broadening of the gain medium and by wavelength-dependent carrier capture and escape rates.

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In this paper, a brief review will be given on recent advances in semiconductor quantum dots based optoelectronic devices. The focus will be on two major application areas, i.e., telecom devices and high power light sources, where some device examples will be discussed on the current status and for the future prospects.

Laterally coupled, complex distributed feedback lasers based on AlInGaAs=InAs=InP quantum dash layers were fabricated by maskless focused ion beam lithography. Continuous-wave powers above 30 mW at room temperature, sidemode suppression ratios of 44 dB and a modulation bandwidth of 7.6 GHz were demonstrated.

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