Gain and noise saturation of wide-band InAs-InP quantum dash optical amplifiers: model and experiments

Hadass, D.; Bilenca, A.; Alizon, R.; Dery, Hanan; Mikhelashvili, V.; Eisenstein, G.; Schwertberger, R.; Somers, A.; Reithmaier, Johann Peter; Forchel, A.; Calligaro, M.; Bansropun, S.; Krakowski, M.

doi:10.1109/jstqe.2005.853740

Cited by 38 publications

(33 citation statements)

References 23 publications

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“…Only electron dynamics are considered in the formulation with the hypothesis that the holes being faster follows the electrons. The technique utilized here is similar to the one reported in [4,10] with analogous assumptions that were made for the analysis of Qdash semiconductor optical amplifier and Qdot lasers, respectively. The reservoir of carriers, in this case, is the separate-confined heterostructure (SCH) followed by the wetting layer (WL).…”

Section: Simulation Modelmentioning

confidence: 99%

“…It is noteworthy to mention that, apart from interacting with each other through the WL, the QDash groups high density of states (DOS) energy tail provides another crosstalk mechanism [10]. The resulting rate equation system is as follows:…”

Section: (C)mentioning

confidence: 99%

“…In brief, g m j,k incorporates both, the homogeneous, B(E m -E j,k ) and the inhomogeneous, G j,k , broadening. Moreover, it is worth mentioning that N D and G j,k includes the unique features of the QDash by considering the quantum wire (Qwire) like density of state (DOS) function (which is proportional to 1/¥E) [10]. The carrier relaxation and the re-excitation rates from WL to QDash energy states are calculated according to [10] by considering the initial relaxation time Ĳ WD0 (capture time when the k th state j th QDash group is unoccupied).…”

Section: (C)mentioning

confidence: 99%

“…Qdashes which may be treated as a dense quantum wires has also found recent attention in lasers [7]- [9] and semiconductor optical amplifiers [10]. They have been utilized in long wavelength communications with added advantages of wider gain spectrum, possible wavelength tuning [3], etc.…”

Section: Introductionmentioning

confidence: 99%

“…The mail goal of this paper is to investigate theoretically the role of active medium inhomogeneity on the lasing spectra of InAs/InP Qdash laser at room temperature. The developed model utilizes the Qdash laser theory [10] that is based on solving the fundamental multi-mode carrier photon rate equations in the frame of master equation model and carrier dynamics processes [4]. The model predicted an increase in the threshold current density with increase in the active region inhomogeneity and also a red shift in the central lasing wavelength.…”

Section: Introductionmentioning

confidence: 99%

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Effect of active medium inhomogeneity on lasing characteristics of InAs/InP quantum-dash lasers

Khan

Schwingenschlögl

et al. 2010

2010 Photonics Global Conference

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Abstract-The authors report on the effect of quantum-dash (Qdash) inhomogeneity on the characteristics of InAs/InP Qdash laser utilizing a single state rate equation model. The inhomogeneity is assumed to follow the Gaussian approximation. From our observation, an increased in Qdash inhomogeneity results in increasing of threshold current density and redshifting of the peak lasing wavelength. The lasing linewidth of the Qdash lasers has also found to increase under large injection current, attaining a full width at half maximum (FWHM) of ~ 17 nm.

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Section: Simulation Modelmentioning

confidence: 99%

Section: (C)mentioning

confidence: 99%

Section: (C)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of active medium inhomogeneity on lasing characteristics of InAs/InP quantum-dash lasers

Khan

Schwingenschlögl

et al. 2010

2010 Photonics Global Conference

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Optoelectronic Device Simulations Based on Macroscopic Maxwell–Bloch Equations

Jirauschek

Riesch

Tzenov

2019

Advcd Theory and Sims

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Due to their intuitiveness, flexibility, and relative numerical efficiency, the macroscopic Maxwell-Bloch (MB) equations are a widely used semiclassical and semi-phenomenological model to describe optical propagation and coherent light-matter interaction in media consisting of discrete-level quantum systems. This review focuses on the application of this model to advanced optoelectronic devices, such as quantum cascade and quantum dot lasers. The Bloch equations are here treated as a density matrix model for driven quantum systems with two or multiple discrete energy levels, where dissipation is included by Lindblad terms. Furthermore, the 1D MB equations for semiconductor waveguide structures and optical fibers are rigorously derived. Special analytical solutions and suitable numerical methods are presented. Due to the importance of the MB equations in computational electrodynamics, an emphasis is placed on the comparison of different numerical schemes, both with and without the rotating wave approximation. The implementation of additional effects which can become relevant in semiconductor structures, such as spatial hole burning, inhomogeneous broadening, and local-field corrections, is discussed. Finally, links to microscopic models and suitable extensions of the Lindblad formalism are briefly addressed. of a lower bandgap material than the adjacent layers, which restricts the free electron motion in that layer to the in-plane directions and gives rise to quantized energy states in growth direction. As a consequence of the further restriction of the energy spectrum and the even stronger carrier localization, additional improvement can be expected from 2D or 3D confinement, resulting in quantum wire/dash and quantum dot (QD) structures, respectively. Indeed, QD [1][2][3] and quantum dash [4] lasers and laser amplifiers have been shown to exhibit excellent characteristics. In Figure 1, the formation of quantized states in quantum wells, wires, and dots is schematically illustrated. The term quantum dash refers to an elongated nanostructure, that is, some kind of short quantum wire. By contrast, the term nanowire does not necessarily indicate strong quantum confinement. For example, in nanowire lasers, the nanowire geometry typically serves as a single-mode optical waveguide resonator, while the active region is based on a heterostructure or quantum well, as in a conventional laser diode. [5,6] Semiconductor optoelectronic devices usually rely on electron-hole recombination, that is, optical transitions between conduction and valence band states. The associated resonance wavelength is largely determined by the semiconductor bandgap, which establishes a lower bound on the transition energy. Thus, the coverage of a certain spectral region depends on the existence of suitable semiconductor materials, which for example restricts the availability of practical optoelectronic sources and detectors in the mid-infrared and terahertz regions. An alternative concept is based on intersubband devices, which employ so-called i...

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Dynamics of optical pulse amplification and saturation in multiple state quantum dot semiconductor optical amplifiers

Qasaimeh

2009

Opt Quant Electron

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We have developed a novel analytical model, which describes the dynamic characteristics of optical pulse amplification and saturation in three state quantum dot (QD) semiconductor optical amplifiers (SOAs). The model takes into account the effect of the ground state, the excited state and the 2-dimensional wetting layer. The model is simple, accurate and fast, which makes it suitable for device design and characterization. The derived model has been utilized to study large-signal cross-gain modulation and crosstalk in multichannel QD-SOA. Analytical expressions for large signal cross-gain modulation and crosstalk in multichannel SOA are derived. The effect of the dot relaxation/escape lifetimes and energy separation between QD states on cross-gain modulation and crosstalk are also studied. Our calculations show that by reducing QD energy state separation, via engineering the dot size and composition, one can reduce the cross-gain modulation efficiency and reduce crosstalk in multi-channel QD-SOAs.

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Gain and noise saturation of wide-band InAs-InP quantum dash optical amplifiers: model and experiments

Cited by 38 publications

References 23 publications

Effect of active medium inhomogeneity on lasing characteristics of InAs/InP quantum-dash lasers

Effect of active medium inhomogeneity on lasing characteristics of InAs/InP quantum-dash lasers

Optoelectronic Device Simulations Based on Macroscopic Maxwell–Bloch Equations

Dynamics of optical pulse amplification and saturation in multiple state quantum dot semiconductor optical amplifiers

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