We report growth of self-organized In 0.4 Ga 0.6 As quantum dots on Si substrates by molecular-beam epitaxy. Low-temperature ͑17 K͒ photoluminescence spectra show that the optical properties of In 0.4 Ga 0.6 As quantum dots grown on Si are comparable to quantum dots grown on GaAs substrates. We also present preliminary characteristics of In 0.4 Ga 0.6 As quantum-dot lasers grown on Si substrates. Light versus current measurements at 80 K under pulsed bias conditions show that I th ϭ3.85 kA/cm 2. The lasing spectral output has a peak emission wavelength of 1.013 m and a linewidth ͑full width at half maximum͒ of ϳ4 Å at the threshold.
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