Static and dynamic properties of laterally coupled DFB lasers based on InAs∕InP QDash structures

Kaiser, W.; Mathwig, Klaus; Deubert, S.; Reithmaier, J.P.; Forchel, A.; Parillaud, O.; Krakowski, M.; Hadass, D.; Mikhelashvili, V.; Eisenstein, G.

doi:10.1049/el:20051160

Cited by 24 publications

(8 citation statements)

References 9 publications

(12 reference statements)

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“…From the temperature dependent measurements, a small shift in the lasing wavelength of 0.1 nm/K (20 to 70ºC) was obtained and has been attributed to the temperature dependence of the active region refractive index. This work was soon followed by Kaiser et al [267] who reported the dynamic properties of laterally coupled DFB gratings based 4 stack InAs/InGaAlAs Qdash laser, as shown in Fig. 39(a).…”

Section: Single Mode Lasersmentioning

confidence: 98%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: Single Mode Lasersmentioning

confidence: 98%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…For comparison, we note that a temperature coefficient of 0.092 nm/K has been measured in 1.55 lm GaInAsP/InP LC-DBR lasers, 49 while values of 0.11 nm/K and 0.14 nm/K have been extracted for AlGaInAs/InAs/InP Qdash based LC-DFB lasers emitting at 1.55 lm (Ref. 50) and 2 lm (Ref. 9), respectively, and 0.11 nm/K for InGaAs/lnGaAsP QW based DFB lasers at 1.95 lm.…”

Section: Resultsmentioning

confidence: 99%

Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

Papatryfonos

Saladukha

Merghem

et al. 2017

Journal of Applied Physics

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Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quantum dash (Qdash) active regions and etched lateral Bragg gratings. The lasers have been designed to operate at wavelengths near 2 μm and exhibit a threshold current of 65 mA for a 600 μm long cavity, and a room temperature continuous wave output power per facet >5 mW. Using our novel growth approach based on the low ternary In0.53Ga0.47As barriers, we also demonstrate ridge-waveguide lasers emitting up to 2.1 μm and underline the possibilities for further pushing the emission wavelength out towards longer wavelengths with this material system. By introducing experimentally the concept of high-duty-cycle lateral Bragg gratings, a side mode suppression ratio of >37 dB has been achieved, owing to an appreciably increased grating coupling coefficient of κ ∼ 40 cm−1. These laterally coupled distributed feedback (LC-DFB) lasers combine the advantage of high and well-controlled coupling coefficients achieved in conventional DFB lasers, with the regrowth-free fabrication process of lateral gratings, and exhibit substantially lower optical losses compared to the conventional metal-based LC-DFB lasers

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“…Distributed feedback lasers with laterally defined gratings reach modulation bandwidths beyond 7.5 GHz [13], which will make 10 GBit/s data transmission possible. Nevertheless, the bandwidth of quantum dots lasers in general is more limited in bandwidth than previously expected.…”

Section: Inp Based Quantum Dashes Lasersmentioning

confidence: 99%

Semiconductor quantum dots devices: Recent advances and application prospects

Reithmaier

Somers

Kaiser

et al. 2006

Physica Status Solidi (b)

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Static and dynamic properties of laterally coupled DFB lasers based on InAs∕InP QDash structures

Cited by 24 publications

References 9 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

Semiconductor quantum dots devices: Recent advances and application prospects

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