Visible light communication (VLC) is an emerging technology that uses light-emitting diodes (LEDs) or laser diodes for simultaneous illumination and data communication. This technology is envisioned to be a major part of the solution to the current bottlenecks in data and wireless communication. However, the conventional lighting phosphors that are typically integrated with LEDs have limited modulation bandwidth and thus cannot provide the bandwidth required to realize the potential of VLC. In this work, we present a promising light converter for VLC by designing solution-processed CsPbBr 3 perovskite nanocrystals (NCs) with a conventional red phosphor. The fabricated CsPbBr 3 NC phosphor-based white light converter exhibits an unprecedented modulation bandwidth of 491 MHz, which is ∼40 times greater than that of conventional phosphors, and the capability to transmit a high data rate of up to 2 Gbit/s. Moreover, this perovskiteenhanced white light source combines ultrafast response characteristics with a high color rendering index of 89 and a correlated color temperature of 3236 K, thereby enabling dual VLC and solid-state lighting functionalities.

Hydrogen production via photoelectrochemical water-splitting is a key source of clean and sustainable energy. The use of one-dimensional nanostructures as photoelectrodes is desirable for photoelectrochemical water-splitting applications due to the ultralarge surface areas, lateral carrier extraction schemes, and superior light-harvesting capabilities. However, the unavoidable surface states of nanostructured materials create additional charge carrier trapping centers and energy barriers at the semiconductor-electrolyte interface, which severely reduce the solar-to-hydrogen conversion efficiency. In this work, we address the issue of surface states in GaN nanowire photoelectrodes by employing a simple and low-cost surface treatment method, which utilizes an organic thiol compound (i.e., 1,2-ethanedithiol). The surface-treated photocathode showed an enhanced photocurrent density of -31 mA/cm at -0.2 V versus RHE with an incident photon-to-current conversion efficiency of 18.3%, whereas untreated nanowires yielded only 8.1% efficiency. Furthermore, the surface passivation provides enhanced photoelectrochemical stability as surface-treated nanowires retained ∼80% of their initial photocurrent value and produced 8000 μmol of gas molecules over 55 h at acidic conditions (pH ∼ 0), whereas the untreated nanowires demonstrated only <4 h of photoelectrochemical stability. These findings shed new light on the importance of surface passivation of nanostructured photoelectrodes for photoelectrochemical applications.

Paper is an excellent candidate to replace plastics as a substrate for flexible electronics due to its low cost, renewability and flexibility. Cellulose nanopaper (CNP), a new type of paper made of nanosized cellulose fibers, is a promising substrate material for transparent and flexible electrodes due to its potentially high transparency and high mechanical strength. Although CNP substrates can achieve high transparency, they are still characterized by high diffuse transmittance and small direct transmittance, resulting in high optical haze of the substrates. In this study, we proposed a simple methodology for large-scale production of high-transparency, low-haze CNP comprising both long cellulose nanofibrils (CNFs) and short cellulose nanocrystals (CNCs). By varying the CNC/CNF ratio in the hybrid CNP, we could tailor its total transmittance, direct transmittance and diffuse transmittance. By increasing the CNC content, the optical haze of the hybrid CNP could be decreased and its transparency could be increased. The direct transmittance and optical haze of the CNP were 75.1% and 10.0%, respectively, greatly improved from the values of previously reported CNP (31.1% and 62.0%, respectively). Transparent, flexible electrodes were fabricated by coating the hybrid CNP with silver nanowires (AgNWs). The electrodes showed a low sheet resistance (minimum 1.2 Ω sq(-1)) and a high total transmittance (maximum of 82.5%). The electrodes were used to make a light emitting diode (LED) assembly to demonstrate their potential use in flexible displays.

The lack of optical constants information for hybrid perovskite of CH₃NH₃PbBr₃ in thin films form can delay the progress of efficient LED or laser demonstration. Here, we report on the optical constants (complex refractive index and dielectric function) of CH₃NH₃PbBr₃ perovskite thin films using spectroscopic ellipsometry. Due to the existence of voids, the refractive index of the thin films is around 8% less than the single crystals counterpart. The energy bandgap is around 2.309 eV as obtained from photoluminescence and spectrophotometry spectra, and calculated from the SE analysis. The precise measurement of optical constants will be useful in designing optical devices using CH₃NH₃PbBr₃ thin films.

A droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the "green gap" has been a subject of intense scientific and engineering interest. While several properties of nanowires on silicon make them promising for use in LED development, the high aspect ratio of individual nanowires and their laterally discontinuous features limit phonon transport and device performance. Here, we report on the monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire LEDs emitting at ∼710 nm. The reliable operation of our uncooled nanowire-LEDs (NW-LEDs) epitaxially grown on molybdenum was evident in the constant-current soft burn-in performed on a 380 μm × 380 μm LED. The square LED sustained 600 mA electrical stress over an 8 h period, providing stable light output at maturity without catastrophic failure. The absence of carrier and phonon transport barriers in NW-LEDs was further inferred from current-dependent Raman measurements (up to 700 mA), which revealed the low self-heating. The radiative recombination rates of NW-LEDs between room temperature and 40 °C was not limited by Shockley-Read-Hall recombination, Auger recombination, or carrier leakage mechanisms, thus realizing droop-free operation. The discovery of reliable, droop-free devices constitutes significant progress toward the development of nanowires for practical applications. Our monolithic approach realized a high-performance device that will revolutionize the way high power, low-junction-temperature LED lamps are manufactured for solid-state lighting and for applications in high-temperature harsh environment.

In this Letter, we use laser beam intensity fluctuation measurements to model and describe the statistical properties of weak temperature-induced turbulence in underwater wireless optical communication (UWOC) channels. UWOC channels with temperature gradients are modeled by the generalized gamma distribution (GGD) with an excellent goodness of fit to the measured data under all channel conditions. Meanwhile, thermally uniform channels are perfectly described by the simple gamma distribution which is a special case of GGD. To the best of our knowledge, this is the first model that comprehensively describes both thermally uniform and gradient-based UWOC channels.

High-quality nitride materials grown on scalable and low-cost metallic substrates are considerably attractive for high-power light-emitters. We demonstrate here, for the first time, the high-power red (705 nm) InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) self-assembled directly on metal-substrates. The LEDs exhibited a low turn-on voltage of ∼2 V without efficiency droop up to injection current of 500 mA (1.6 kA/cm(2)) at ∼5 V. This is achieved through the direct growth and optimization of high-quality nanowires on titanium (Ti) coated bulk polycrystalline-molybdenum (Mo) substrates. We performed extensive studies on the growth mechanisms, obtained high-crystal-quality nanowires, and confirmed the epitaxial relationship between the cubic titanium nitride (TiN) transition layer and the hexagonal nanowires. The growth of nanowires on all-metal stack of TiN/Ti/Mo enables simultaneous implementation of n-metal contact, reflector, and heat sink, which greatly simplifies the fabrication process of high-power light-emitters. Our work ushers in a practical platform for high-power nanowires light-emitters, providing versatile solutions for multiple cross-disciplinary applications that are greatly enhanced by leveraging on the chemical stability of nitride materials, large specific surface of nanowires, chemical lift-off ready layer structures, and reusable Mo substrates.

To date, solid-state lighting (SSL), visible light communication (VLC), and optical clock generation functionalities in the blue-green color regime have been demonstrated based on discrete devices, including light-emitting diodes, laser diodes, and transverse-transmission modulators. This work presents the first integrated waveguide modulator–laser diode (IWM-LD) at 448 nm, offering the advantages of small footprint, high speed, and low power consumption. A high modulation efficiency of 2.68 dB/V, deriving from a large extinction ratio of 9.4 dB and a low operating voltage range of 3.5 V, was measured. The electroabsorption characteristics revealed that the modulation effect, as observed from the red-shifting of the absorption edge, resulted from the external-field-induced quantum-confined Stark effect. A comparative analysis of the photocurrent versus wavelength spectra in semipolar- and polar-plane InGaN/GaN quantum wells (QWs) confirmed that the IWM–LD based on semipolar (202̅1̅) QWs was able to operate in a manner similar to other III–V materials typically used in optical telecommunications, due to the reduced piezoelectric field. Utilizing the integrated modulator, a −3 dB bandwidth of ∼1 GHz was measured, and a data rate of 1 Gbit/s was demonstrated using on–off keying modulation. Our experimental investigation highlighted the advantage of implementing the IWM–LD on the same semipolar QW epitaxy in enabling a high-efficiency platform for SSL–VLC dual functionalities.