Saturation spectra of 1550 nm quantum dash optical amplifiers: model and experiments

Hadass, D.; Bilenca, A.; Alizon, R.; Dery, Hanan; Mikhelashvili, V.; Eisenstein, G.; Schwertberger, R.; Somers, A.; Reithmaier, Johann Peter; Forchel, A.; Calligaro, M.; Bansropun, S.; Krakowski, Michael

doi:10.1109/eqec.2005.1567175

Cited by 2 publications

(3 citation statements)

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“…One can observe a 3 dB gain bandwidth of 50 nm, and a total amplification bandwidth (gain > 0 dB) of 210 nm. Such results are very similar to those published in [36,37,38]. Such an optical bandwidth is slightly higher to the one obtained with standard quantum well SOA, but lower than the gain bandwidth of low confinement bulk SOA, typically 70 nm.…”

Section: Qd-based Semiconductor Optical Amplifiersupporting

confidence: 90%

Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m

Lelarge

Dagens

Renaudier

et al. 2007

IEEE J. Select. Topics Quantum Electron.

386

201

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This paper summarizes recent advances on InAs/InP quantum dashes (QD) materials for lasers and amplifiers, and QD device performance with particular interest for optical communication. We investigate both InAs/InP dashes in a barrier and dashes in a well (DWELL) heterostructures operating at 1.5 µm. These two types of QDs can provide high gain and low losses. Continuous-wave room-temperature lasing operation on ground state of cavity length as short as 200µm has been achieved, demonstrating the high modal gain of the active core. A threshold current density as low as 110 A/cm 2 per QD layer has been obtained for infinite-length DWELL laser. An optimized DWELL structure allows achieving of a T0 larger than 100 K for broad area lasers and of 80 K for single transverse mode lasers in the temperature range between 25°C and 85°C. Buried ridge stripe type single mode DFB lasers are also demonstrated for the first time, exhibiting a side-mode suppression-ratio as high as 45 dB. Such DFB lasers allow the first floor free 10 Gb/s direct modulation for back-to-back and transmission over 16 km standard optical fiber. In addition, novel results are given on gain, noise and four wave mixing of QD-based semiconductor optical amplifiers. Furthermore, we demonstrate that QD FP lasers, owing to the small confinement factor and the 3D quantification of electronic energy levels, exhibit a beating linewidth as narrow as 15 kHz. Such an extremely narrow linewidth, compared to their QW or bulk counterparts, leads to the excellent phase noise and time jitter characteristics when QD lasers are actively mode-locked. These advances constitute a new step towards the application of QD lasers and amplifiers to the field of optical fiber communications.

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Section: Qd-based Semiconductor Optical Amplifiersupporting

confidence: 90%

Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m

Lelarge

Dagens

Renaudier

et al. 2007

IEEE J. Select. Topics Quantum Electron.

386

201

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“…Sometimes the carrier injection from the bulk to the quantum well wetting layers is modeled by additional equations . For self‐assembled quantum dash structures, the wetting layers can be considered in an analogous manner …”

Section: Application To Optoelectronic Devicesmentioning

confidence: 99%

“…358 For self-assembled quantum dash structures, the wetting layers can be considered in an analogous manner. 23,359 The extended Bloch equations, Eqs. ( 17), ( 172) and (173), are then coupled to Maxwell's equations, Eq.…”

Section: Quantum Dot Devicesmentioning

confidence: 99%

Optoelectronic Device Simulations Based on Macroscopic Maxwell–Bloch Equations

Jirauschek

Riesch

Tzenov

2019

Advcd Theory and Sims

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Due to their intuitiveness, flexibility, and relative numerical efficiency, the macroscopic Maxwell-Bloch (MB) equations are a widely used semiclassical and semi-phenomenological model to describe optical propagation and coherent light-matter interaction in media consisting of discrete-level quantum systems. This review focuses on the application of this model to advanced optoelectronic devices, such as quantum cascade and quantum dot lasers. The Bloch equations are here treated as a density matrix model for driven quantum systems with two or multiple discrete energy levels, where dissipation is included by Lindblad terms. Furthermore, the 1D MB equations for semiconductor waveguide structures and optical fibers are rigorously derived. Special analytical solutions and suitable numerical methods are presented. Due to the importance of the MB equations in computational electrodynamics, an emphasis is placed on the comparison of different numerical schemes, both with and without the rotating wave approximation. The implementation of additional effects which can become relevant in semiconductor structures, such as spatial hole burning, inhomogeneous broadening, and local-field corrections, is discussed. Finally, links to microscopic models and suitable extensions of the Lindblad formalism are briefly addressed. of a lower bandgap material than the adjacent layers, which restricts the free electron motion in that layer to the in-plane directions and gives rise to quantized energy states in growth direction. As a consequence of the further restriction of the energy spectrum and the even stronger carrier localization, additional improvement can be expected from 2D or 3D confinement, resulting in quantum wire/dash and quantum dot (QD) structures, respectively. Indeed, QD [1][2][3] and quantum dash [4] lasers and laser amplifiers have been shown to exhibit excellent characteristics. In Figure 1, the formation of quantized states in quantum wells, wires, and dots is schematically illustrated. The term quantum dash refers to an elongated nanostructure, that is, some kind of short quantum wire. By contrast, the term nanowire does not necessarily indicate strong quantum confinement. For example, in nanowire lasers, the nanowire geometry typically serves as a single-mode optical waveguide resonator, while the active region is based on a heterostructure or quantum well, as in a conventional laser diode. [5,6] Semiconductor optoelectronic devices usually rely on electron-hole recombination, that is, optical transitions between conduction and valence band states. The associated resonance wavelength is largely determined by the semiconductor bandgap, which establishes a lower bound on the transition energy. Thus, the coverage of a certain spectral region depends on the existence of suitable semiconductor materials, which for example restricts the availability of practical optoelectronic sources and detectors in the mid-infrared and terahertz regions. An alternative concept is based on intersubband devices, which employ so-called i...

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Saturation spectra of 1550 nm quantum dash optical amplifiers: model and experiments

Cited by 2 publications

References 1 publication

Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m

Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m

Optoelectronic Device Simulations Based on Macroscopic Maxwell–Bloch Equations

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