Multiple wavelength amplification in wide band high power 1550 nm quantum dash optical amplifier

Alizon, R.; Hadass, D.; Mikhelashvili, V.; Eisenstein, G.; Schwertberger, R.; Somers, A.; Reithmaier, Johann Peter; Forchel, A.; Calligaro, M.; Bansropun, S.; Krakowski, M.

doi:10.1049/el:20040531

Cited by 41 publications

(14 citation statements)

References 4 publications

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“…One can observe a 3 dB gain bandwidth of 50 nm, and a total amplification bandwidth (gain > 0 dB) of 210 nm. Such results are very similar to those published in [36,37,38]. Such an optical bandwidth is slightly higher to the one obtained with standard quantum well SOA, but lower than the gain bandwidth of low confinement bulk SOA, typically 70 nm.…”

Section: Qd-based Semiconductor Optical Amplifiersupporting

confidence: 90%

Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m

Lelarge

Dagens

Renaudier

et al. 2007

IEEE J. Select. Topics Quantum Electron.

386

201

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This paper summarizes recent advances on InAs/InP quantum dashes (QD) materials for lasers and amplifiers, and QD device performance with particular interest for optical communication. We investigate both InAs/InP dashes in a barrier and dashes in a well (DWELL) heterostructures operating at 1.5 µm. These two types of QDs can provide high gain and low losses. Continuous-wave room-temperature lasing operation on ground state of cavity length as short as 200µm has been achieved, demonstrating the high modal gain of the active core. A threshold current density as low as 110 A/cm 2 per QD layer has been obtained for infinite-length DWELL laser. An optimized DWELL structure allows achieving of a T0 larger than 100 K for broad area lasers and of 80 K for single transverse mode lasers in the temperature range between 25°C and 85°C. Buried ridge stripe type single mode DFB lasers are also demonstrated for the first time, exhibiting a side-mode suppression-ratio as high as 45 dB. Such DFB lasers allow the first floor free 10 Gb/s direct modulation for back-to-back and transmission over 16 km standard optical fiber. In addition, novel results are given on gain, noise and four wave mixing of QD-based semiconductor optical amplifiers. Furthermore, we demonstrate that QD FP lasers, owing to the small confinement factor and the 3D quantification of electronic energy levels, exhibit a beating linewidth as narrow as 15 kHz. Such an extremely narrow linewidth, compared to their QW or bulk counterparts, leads to the excellent phase noise and time jitter characteristics when QD lasers are actively mode-locked. These advances constitute a new step towards the application of QD lasers and amplifiers to the field of optical fiber communications.

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Section: Qd-based Semiconductor Optical Amplifiersupporting

confidence: 90%

Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m

Lelarge

Dagens

Renaudier

et al. 2007

IEEE J. Select. Topics Quantum Electron.

386

201

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“…For instance, simultaneous amplification of 8 different wavelengths at the same time was performed by Alizon et al [357] utilizing a single Qdash SOA. Each of the channels were coupled into a fiber, modulated by 10 Gbps PRBS data stream ,and then into the SOA.…”

Section: High Speed Amplification and Signal Processingmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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“…The large inhomogeneous Qdash broadening allow for low cross-talk amplification of wavelength division multiplexed signals. 6 The small signal modal gain of the device as function of current was measured at 1525, 1560, and 1596 nm ͑Fig. 1͒.…”

Section: G Eisensteinmentioning

confidence: 99%

Ultrafast gain and index dynamics of quantum dash structures emitting at 1.55μm

Poel

Mørk

Somers

et al. 2006

Applied Physics Letters

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Multiple wavelength amplification in wide band high power 1550 nm quantum dash optical amplifier

Cited by 41 publications

References 4 publications

Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m

Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Ultrafast gain and index dynamics of quantum dash structures emitting at 1.55μm

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