Time-resolved chirp in an InAs∕InP quantum-dash optical amplifier operating with 10Gbit∕s data

Hadass, D.; Mikhelashvili, V.; Eisenstein, G.; Somers, A.; Deubert, S.; Kaiser, W.; Reithmaier, Johann Peter; Forchel, A.; Finzi, D.; Maimon, Y.

doi:10.1063/1.1994947

Cited by 21 publications

(14 citation statements)

References 11 publications

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“…4 we have obtained GHz/mW, and . The values of the equivalent LEF are comparable with those obtained by chirp measurements of QD-LD in [14]; we have also two different values for the LE and TE as measured in [3]. To better understand which are the main mechanisms that cause a nonzero chirp above threshold, we have calculated the separate contributions to due to the carrier variation in the QD GSs with emission energy lower then the lasing energy (we call it red GS contribution), in the QD group with emission energy equal to the lasing energy (lasing contribution), in the QD GS with emission energy higher than the lasing energy (blue GS contribution), in the ES (ES contribution).…”

Section: A Chirp Analysissupporting

confidence: 88%

“…4(a) in the power-frequency plane. This kind of representation ("fish diagram") was presented in [3] for the analysis of the chirp in quantum dash semiconductor amplifiers and we found it very useful to compare various simulation results and also for defining some equivalent parameters useful for the analysis of the chirp above threshold.…”

Section: A Chirp Analysismentioning

confidence: 99%

“…According to these observations the LEF parameter losses part of its significance in quantifying the chirp properties of QD devices and it is better to address the problem of the frequency chirp avoiding misleading strict correlations with the LEF. The phase dynamics of QD-SOA has been accurately studied in [5] and [3] from both theoretical and experimental point of view whereas only few experiments report chirp measurements of QD-LD [13], [14] and, to the best of our knowledge, the chirp properties of a single longitudinal mode QD-LD have never been theoretically analyzed. The purpose of this paper is to analyze through numerical simulations the chirp characteristics of QD-LD and show how the nonidealities of the QD material (i.e., inhomogeneous gain broadening, presence of several confined states in QDs and the wetting layer (WL), etc.)…”

Section: Introductionmentioning

confidence: 99%

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Numerical Analysis of the Frequency Chirp in Quantum-Dot Semiconductor Lasers

Gioannini

Montrosset

2007

IEEE J. Quantum Electron.

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We present a numerical model for the analysis of the chirp dynamics of quantum-dot (QD) semiconductor laser under large signal current modulation. The model is based on the multipopulation rate equation formalism, and it includes all the peculiar characteristics of the active QD material such as the inhomogeneous broadening of the gain spectrum, the presence of an excited state confined in the QDs and the presence of nonconfined states due to the wetting layer and the barrier. In this paper the model is applied to the analysis of the chirp of two QD single-mode lasers emitting from the ground state and from the excited state, respectively. In order to make comparisons of the chirp in various operating conditions, we define some equivalent parameters for quantifying the adiabatic and transient contributions to the chirp. These parameters are then used to analyze the chirp as function of the bias current, of the modulation depth and of the modulation frequency. All the various simulation results show that the carrier accumulation in the QD states, poorly involved in the stimulated emission process and the carrier dynamics in these states, can cause a nonzero chirp under current modulation even for the ideal condition of zero linewidth enhancement factor (or -parameter) at the laser threshold.

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Section: A Chirp Analysissupporting

confidence: 88%

Section: A Chirp Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Numerical Analysis of the Frequency Chirp in Quantum-Dot Semiconductor Lasers

Gioannini

Montrosset

2007

IEEE J. Quantum Electron.

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“…The conversion efficiency of the conjugate FWM product for both the positive and negative detuning was measured and found to be same in shape and was attributed to the reduction in the LEF [353,354]. A 40 ps probe signal at a repetition rate of 500 MHz and an average input power of -7 dBm was detuned from the CW pump by 6.2 nm with large signal-to-noise ratio.…”

Section: High Speed Amplification and Signal Processingmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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“…The maximum instantaneous frequency-shift at the peak of the pulse is ~4 THz. Previous chirp measurement in similar QDash amplifiers [17] with much wider, 800 ps, pulses yielded frequency shifts of ~4 GHz. The increase by three orders of magnitude is consistent with the ratio of the rate of power change [18] (rise times) between the two vastly different pulses.…”

Section: Quasi-linear and Moderate Saturation Regimementioning

confidence: 99%