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Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 µm. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelling.

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We present a detailed quantitative comparison between a finite-difference traveling wave (FDTW) model and a delayed differential equation (DDE) approach for the simulation of passive mode-locking in quantum dot lasers with both ring and Fabry-Perot (FP) cavities. Modifications with respect to the standard DDE models available in the literature are proposed. The new DDE approach improves the quantitative agreement with the FDTW model when applied to the simulation of passive mode-locking in FP lasers, preserving a very high computational efficiency. The modifications proposed in the DDE model also apply to the simulation of quantum-well and bulk devices.

Simulations of differential gain and linewidth enhancement factor of quantum dot semiconductor lasers m a r i a n g e l a g i o a n n i n i * , a l b e r t o s e v e g a a n d i v o m o n t r o s s e t Abstract. We present a multi-population rate equation model for the analysis of the static and dynamic characteristics of a quantum dot (QD) semiconductor laser. The model is applied to the extraction of the differential gain and linewidth enhancement factor of the QD laser simulating the same kind of experiments usually done in the laboratory. Coherently with the experimental results, we show the difference between the values of the differential parameters extracted in below and above threshold characterizations. We demonstrate that such discrepancy is due the complex dynamics of the carriers in those energy states, whose carrier concentration is not clamped by the stimulated emission process above threshold.