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We discuss an ultrawide, voltage-tunable type-II mid-IR interband cascade laser. Its design has a charge accumulation layers outside of the optically active quantum wells that unclamps the electron-hole concentrations and facilitates above-threshold Stark shifts. Our results demonstrate laser tuning of 120 nm ͑120 cm −1 ͒.

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Two-dimensional microshutter arrays are being developed at NASA Goddard Space Flight Center (GSFC) for the Next Generation Space Telescope (NGST) for use in the near-infrared region. Functioning as focal plane object selection devices, the microshutter arrays are 2-D programmable masks with high efficiency and high contrast. The NGST environment requires cryogenic operation at 45 K. Arrays are close-packed silicon nitride membranes with a unit cell size of 100x100 micrometer. Individual shutters are patterned with a torsion flexure permitting shutters to open 90 degrees with minimized mechanical stress concentration. The mechanical shutter arrays are fabricated with MEMS technologies. The processing includes a RIE front-etch to form shutters out of the nitride membrane, an anisotropic back-etch for wafer thinning, and a deep RIE (DRIE) back-etch down to the nitride shutter membrane to form frames and to relieve the shutters from the silicon substrate. A layer of magnetic material is deposited onto each shutter. Onto the side-wall of the support structure a metal layer is deposited that acts as a vertical hold electrode. Shutters are rotated into the support structure by means of an external magnet that is swept across the shutter array for opening. Addressing is performed through a scheme using row and column address lines on each chip and external addressing electronics.

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