Development of a 1 megapixel long IR QWIP focal plane array

Jhabvala, M.; Choi, K. K.; Monroy, C.; La, A.; Adams, Jonathan; Devitt, John; Forrai, D. P.; Endres, D.

doi:10.1117/12.717224

Cited by 6 publications

(5 citation statements)

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“…The third development direction of QWIP is large-scale infrared FPA detection. Long wave infrared one mega pixel scale's QWIP-FPA has been demonstrated [13] . The three development directions above for QWIP are in in light of its advantages as compared with the HCT detector.…”

Section: Discussion Of Qwip's Developmentmentioning

confidence: 99%

“…The linear array [5][6][7] and focal plane array [8][9][10][11][12] devices get continuous development simultaneously as well as the single element detectors. Recently the QWIP-FPAs with 1 mega pixels have been reported by National Aeronautics and Space Administration (NASA) [13] . The two-color QWIP linear array with 256×256 pixels can be employed for the mid-wavelength and long-wavelength detection simultaneously [14] , while the two-color QWIP-FPA with 640 ×480 pixels for 8-9 μm and 14-15 μm detection [15] .…”

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confidence: 99%

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Development of an infrared detector: Quantum well infrared photodetector

Lü

Zheng

et al. 2009

Sci. China Ser. G-Phys. Mech. Astron.

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The progress in the quantum well infrared photo-detector (QWIP) based on quantum confinement in semiconductor in recent 10 years has been reviewed. The differences between QWIP and the HgCdTe (HCT) infrared detector as well as their compensation are analyzed. The outlook for near-future trends in QWIP technologies is also presented.infrared photoelectronics, QWIP, progress, development trendThe infrared detectors are transducers of infrared radiation with high-sensitivity. The early infrared detectors are thermometers, responding purely to the heating effect of the incoming infrared radiation. The detectors made based on the difference of electrons' transport performance when excited by photons are called photon detectors. The photon detectors represented by HgCdTe have achieved long-term development, and quantum well infrared photo-detectors (QWIPs), whose mechanism is sharply different from HgCdTe (HCT) detectors, are making a fine figure now.Responding to the heating effect distribution of objects is the certain development of the infrared radiation's detection. The element detector technology combined with the two-dimensional mechanical scanning system constituted the 1st generation scanning imaging detection technology, and the 2nd generation one is the infrared focal plane array technology, which transformed the mechanical scanning into electrical scanning, and single elements into arrays.In the development of array detector, the uniformity is of great importance for the imaging detection. Just like the position and role of silicon material in the micro-electronic field, the HCT infrared focal plane array plays a prominent role in the infrared imaging detection field at present. However, due to the Hg-Te combination bond in HCT material is relatively fragile, the HCT materials and devices preparation always can not be precisely controlled as silicon, making it quite difficult to reach high-uniformity. On the other hand, the main material of QWIP device is GaAs-based semiconductor material, which is only second to silicon process and 1st-order higher in uniformity. However, the quantum efficiency of QWIP is about 1st-order lower than that of HCT infrared detector due to the basic operation principle of QWIPs. Thus, the advantages of QWIPs in uniformity and disadvantages in quantum efficiency have determined a complementary status between them.In 1983, Smith et al. [1] firstly showed the possibility of using optical waveguide-type multiple quantum well for 3-5 μm and 8-14 μm infrared light detection. Two years later strong intersubband absorption in a GaAs/ Al x Ga 1−x As multi-quantum well under oblique incidence was observed by West et al. [2] . Later, a detectivity of 1.0×10 10 cm·Hz 1/2 /W and peak response wavelength of

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Section: Discussion Of Qwip's Developmentmentioning

confidence: 99%

mentioning

confidence: 99%

Development of an infrared detector: Quantum well infrared photodetector

Lü

Zheng

et al. 2009

Sci. China Ser. G-Phys. Mech. Astron.

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“…The material spectral responsivity R(V, λ) is measured from this detector at each substrate voltage V. Since the C-QWIP structure is known to preserve the spectral lineshape of the material [6], this spectrum will be assumed to be the FPA detection spectrum. Also from the same detector, the photoconductive gain g(V) is measured at liquid nitrogen temperature by measuring its generation-recombination noise.…”

Section: Methodsmentioning

confidence: 99%

C-QWIP focal plane array sensitivity

et al. 2009

Self Cite

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We are developing corrugated quantum well infrared photodetector (C-QWIP) technology for long wavelength applications. A number of large format 1024 × 1024 C-QWIP focal plane arrays (FPAs) have been demonstrated. The measured quantum efficiency η is ranging from 15 -37%, depending on the detector type, doping density and number of quantum wells in the detector material. The photoconductive gain is between 0.07 and 0.19, while the spectral width is between 1.5 and 3.5 microns. Despite the large integrated η of the C-QWIPs, the number of collected photoelectrons can be limited in shorter cutoff, small pixel FPAs under high speed operation. In this case, the read noise will have a large impact on the system sensitivity. In this paper, we will discuss the detector model, the measured pixel characteristics, and the effects of read noise on the FPA performance. Our analysis shows that the tolerable read noise improves with the cutoff wavelength. For example, to achieve a sensitivity of 20 mK at 2 msec integration time, the respective read noise will be 1000, 2000, 3000, and 4000 e¯ at λ c = 8. 8, 9.4, 10.7 and 11.7 μm. This analysis will help to determine the read noise requirement for the C-QWIP FPAs.

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“…The material spectral responsivity R(V, k) is measured from this detector at each substrate voltage V. Since the C-QWIP structure is known to preserve the spectral lineshape of the material [5], this spectrum will be assumed to be the FPA detection spectrum. Also from the same detector, the photoconductive gain g(V) is measured at liquid nitrogen temperature by measuring its generationrecombination noise.…”

Section: Methodsmentioning

confidence: 99%