C-QWIP focal plane arrays

Choi, K. K.; Forrai, D. P.; Endres, D.; Sun, Jason; Pinsukanjana, P.; Devitt, John

doi:10.1016/j.infrared.2009.05.021

Cited by 1 publication

(1 citation statement)

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“…17 With knowledge of both the photocurrent and dark current at different N d , the variation of NEΔT can be readily deduced. Figure 3 shows that, under a fixed integration time of 16 ms and F∕2.3 optics, the NEΔT varies as a function of doping density at different operating temperatures.…”

Section: Detector Designmentioning

confidence: 99%

Design and fabrication of resonator-quantum well infrared photodetector for SF6 gas sensor application

Sun

Choi

DeCuir

et al. 2017

J. Micro/Nanolith. MEMS MOEMS

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Abstract. The infrared absorption of SF 6 gas is narrowband and peaks at 10.6 μm. This narrowband absorption posts a stringent requirement on the corresponding sensors as they need to collect enough signal from this limited spectral bandwidth to maintain a high sensitivity. Resonator-quantum well infrared photodetectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency for more efficient signal collection. Since the resonant approach is applicable to narrowband as well as broadband, it is particularly suitable for this application. We designed and fabricated R-QWIPs for SF 6 gas detection. To achieve the expected performance, the detector geometry must be produced according to precise specifications. In particular, the height of the diffractive elements and the thickness of the active resonator must be uniform, and accurately realized to within 0.05 μm. Additionally, the substrates of the detectors must be completely removed to prevent the escape of unabsorbed light in the detectors. To achieve these specifications, two optimized inductively coupled plasma etching processes were developed. Due to submicron detector feature sizes and overlay tolerance, we used an advanced semiconductor material lithography stepper instead of a contact mask aligner to pattern wafers. Using these etching techniques and tool, we have fabricated focal plane arrays with 30-μm pixel pitch and 320 × 256 format. The initial test revealed promising results. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Detector Designmentioning

confidence: 99%