Type II "W" diodes designed for emission at the spectral line of methane ͑3.31 m͒ when operated near 80 K were grown on a compact 21T RIBER molecular beam epitaxy system. Photoluminescence and cross-sectional scanning tunneling microscopy were used as tools to improve the growth quality of these structures. The diodes exhibited very low lasing thresholds at T =80 K ͑24-40 A/cm 2 ͒, although further development will be required to enhance the characteristic temperature ͑T 0 ϳ 40 K͒ and the maximum operating temperature ͑ϳ190 K͒. The lasers had favorable internal losses at all T up to 190 K ͑ϳ7 cm −1 ͒, and favorable internal efficiencies at low T ͑up to 85%͒. The I -V characteristics of nonlasing test structures were improved substantially by adding n-side "transition" regions that smoothed out abrupt steps in the conduction-band offset.