The interband cascade laser differs from any other class of semiconductor laser, conventional or cascaded, in that most of the carriers producing population inversion are generated internally, at semimetallic interfaces within each stage of the active region. Here we present simulations demonstrating that all previous interband cascade laser performance has suffered from a significant imbalance of electron and hole densities in the active wells. We further confirm experimentally that correcting this imbalance with relatively heavy n-type doping in the electron injectors substantially reduces the threshold current and power densities relative to all earlier devices. At room temperature, the redesigned devices require nearly two orders of magnitude less input power to operate in continuous-wave mode than the quantum cascade laser. The interband cascade laser is consequently the most attractive option for gas sensing and other spectroscopic applications requiring low output power and minimum heat dissipation at wavelengths extending from 3 µm to beyond 6 µm.

Room temperature spasing of surface plasmon polaritons at 1.46 μm wavelength has been demonstrated by sandwiching a gold-film plasmonic waveguide between optically pumped InGaAs quantum-well gain media. The spaser exhibits gain narrowing, the expected transverse-magnetic polarization, and mirror feedback provided by cleaved facets in a 1-mm long cavity fabricated with a flip-chip approach. The 1.06-μm pump-threshold of ~60 kW/cm2 is in good agreement with calculations. The architecture is readily adaptable to all-electrical operation on an integrated microchip.

A compact and versatile source of coherent surface-plasmon polaritions (SPPs) is demonstrated by end-coupling a laser diode operating at 1.46 microm to a plasmonic waveguide integrated on the same microchip. With an optimized overlap between the spatial-modes of the laser and a planar-stripe waveguide, a high coupling efficiency of approximately 36% is achieved, that computations show could approach approximately 60% with smaller, readily achievable gaps between laser and waveguide. This integrated and electrically-activated source, with an available SPP power limited only by the laser diode, appears ideally suited for directly driving plasmonic circuitry or surface-enhanced sensors.