Bias circuit stability has important implications for the study and application of double-barrier resonant tunneling structures. Stability criteria for resonant tunneling diodes are investigated for the common bias circuit topologies. A systematic study was made of the effect of different bias circuit elements on the measured d.c. I-V curves. A double-barrier diode was studied as an example, with experimental and theoretical results. The main results of the paper are (1) stable resonant tunneling diode operation is difficult to obtain, (2) the low-frequency oscillation introduces a characteristic signature in the measured d.c. I-V characteristic.
The potential and capabilities of tunnel transit‐time (TUNNETT) devices for power generation in the 100‐1000 GHz range are presented. The basic properties of these devices and the important material parameters which determine their properties are discussed and criteria for designing such devices are presented. It is shown from a first‐order model that significant amounts of power can be obtained from these devices in the terahertz frequency range.
The power capabilities of three different two-terminal devices, GaAs IMPATT diodes, inP Gunn devices and GaAs TUNNETT diodes are evaluated. Two different selective etching technologies have been employed to fabricate devices on either a diamond heat sink or an integral heat sink. The reported RF power levels in fundamental mode are 20 mW at 120 GHz and 15 mW at 135 GHz for D-band GaAs IMPATT diodes, 21 mW at 120 GHz, 17 mW at 133 GHz and 8 mW at 155 GHz for D-band InP Gunn devices and up to 35 mW around 103 GHz for W-band GaAs TUNNETT diodes. Typical dc to RF conversion efficiencies range from 0.9% up to over 4.0%, In second harmonic mode power levels of 0.25 mW at 223 GHz were measured from TUNNETT diodes and 0.4 mW at 220 GHz from a Gunn device. Aktive Zweipol-Bauelemente als Lokaloszillatoren fiir rauscharme Empfiingersysteme im Frequenzgebiet der Submillimeterwellen Ubersicht: Die Leistungsf/ihigkeit dreier verschiedener Zweipolbauelemente, GaAs-IMPATT-Dioden, InP-Gunn-Bauelemente und GaAs-TUNNETT-Dioden, wird untersucht. Zwei unterschiedliche Herstellungsverfahren mit selektivem ~tzen wurden eingesetzt, um Bauelemente auf einer Diamant-bzw. integrierten Wfirmesenke herzustellen. Hochfrequenzausgangsleistungen yon 20roW bei 120 GHz und 15 mW bei 135 GHz wurden mit GaAs-IMPATT-Dioden ffir das D-Band erzielt, 21 mW bei 120 GHz, 17 mW bei 133 GHz und 8 mW bei 155 GHz mit InP-Gunn-Bauelementen fiir das D-Band und bis zu 35 mW um 103 GHz mit GaAs-TUN-NETT-Dioden ffir das W-Band. Typische Hochfrequenzwirkungsgrade lagen zwischen 0,9% und fiber 4%. Bei der ersten Oberwelle wurden mit TUNNETT-Dioden HF-Leistungen von 0,25 mW bei 223 GHz gemessen und 0,4 mW bei 220 GHz mit einem Gunn-Bauelement. gies. The experimental results on D-band InP Gunn devices agree well with simulations [3] and indicate that fundamental mode operation can be extended to the upper D-band. Since IMPATT diodes, TUNNETT diodes and Gunn devices are nonlinear devices, this paper also focuses on harmonic power extraction.
T U N N E l injection Transit-Time ( T U N N E T T ) diodes are very promising for m e d i u m power, low noise applications up to THz frequencies.We have successfully designed a n d tested G a A s p+n+n-n+ single-drift T U N N E T T diodes for V-band a n d W-band operation. We have measured 26 mW at 58.0 GHz and 33 mW at 93.5 GHz with good spectra.TUNNEl injection Transit-rime (TUNNETT) diodes are a promising technology for low noise, medium power millimeter and submillimeter wave sources. The tunneling process is very fast and localized, and thus TUNNETT diodes are expected not to show the high frequency electronic limitations of m a c t ionization Avalanche Transit-Time (IMPATT) diodes. The tunneling process is also relatively quiet, making TUNNETT diodes a prime candidate for low noise applications. Pulsed oscillations have been demonstrated up to 338 GHz [l]. Recently advances in MBE techniques have been exploited to obtain promising CW power from devices with low impact ionization carrier multiplication [2].We have successfully designed and tested p+n+n-n+ single-drift TUNNETT diodes for V-band (50-75 GHz) and W-band (75-110 GHz) operation. The basic structure and electric field profile of the device is given in Figure 1. Both designs operated within the range of frequencies expected. The V-band devices produced 26 mW at 58 GHz with 1.4 %efficiency. The W-band devices produced 33 mW at 93.5 GHz with 2.65 % efficiency.The oscillations have a clean spectrum. W-band GaAs IMPATT devices have demonstrated very low noise operation [3]. Tunneling is expected to be a much quieter injection mechanism than impact ionization, resulting in a device with still lower noise levels. TUNNETT diodes are very promising for medium power, low noise applications up to THz frequencies [4].The layer sequences for the V-band and W-band designs are shown in Figure 2. The design of the structiirc E P t i I I I c Figure 1: Nominal Structure and Electric Field Profile of a p++n+n+n++ single-drift TUNNETT Diode was based on experimental studies of highly doped MBEgrown p++n+ junctions. The p++ doping is as high its the available technology allows in order to give a one sided junction. The n+ doping is a trade off between avoiding impact ionization and a backward diode. The length of the n+ region is to give the proper field at the beginning of the drift region. The drift region wils designed to have a length of 37r 14 at the nominal operating frequency using a drift velocity of 4 . 6~1 0~ cm/s at 500 K and high fields [5, 61. The doping level in the drift region is a trade off between avoiding impact ionization and space charge effects while maintaining fields sufficient for saturated drift velocity. The Al.ssGa.4sAs layer allows the GaAs substrate to be removed using a selective etch process.The devices were fabricated from MBE grown material. Evaporated Ti/Pt/Au was used for the p-ohmic contact. Gold was electroplated onto the p-ohmic to create an integral heat sink and to provide mechanical strength. The GaAs substrate and the Al.ssG...
A lattice‐matched InGaAs/InAlAs resonant tunnelling diode is studied as a video detector in the millimeter‐wave range. Tangential signal sensitivity and video resistance measurements are made as a function of bias and frequency. A tangential signal sensitivity of — 37 dBm (1 MHz amplifier bandwidth) with a corresponding video resistance of 350 Ω at 40 GHz has been measured. These results, to the best of our knowledge, are the first millimeter‐wave tangential signal sensitivity and video resistance results for a resonant tunnelling diode.
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