Tunnel injection transit-time diodes for W-band power generation

Kidner, C.; Eisele, H.; Haddad, G.I.

doi:10.1049/el:19920322

Cited by 14 publications

(3 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The TD is a typical p ϩ n -type diode. [6][7][8] ͑2͒ Electron injection into a transit space of the PD is realized by electron tunneling through a moderately high square heterobarrier. It takes place in moderately strong electric fields (Eр10 5 V/cm).…”

Section: ͑1͒mentioning

confidence: 99%

See 1 more Smart Citation

Ballistic and quasiballistic tunnel transit time oscillators for the terahertz range: Linear admittance

Gribnikov

Vagidov

Mitin

et al. 2003

Journal of Applied Physics

View full text Add to dashboard Cite

We have considered interactions between ballistic ͑or quasiballistic͒ electrons accelerated by a dc electric field in an undoped transit space ͑T space͒ and a small ultrahigh frequency ac electric field and have calculated the linear admittance of the T space. Electrons in the T space have a conventional, nonparabolic dispersion relation. After consideration of the simplest specific case when the current is limited by the space charge of the emitted electrons, we turned to an actual case when the current is limited by a heterostructural tunnel barrier ͑B barrier͒ separating the heavily doped cathode contact and the T space. We assumed that the B barrier is much thinner than the T space and both dc and ac voltages drop mainly across the T space. The emission tunnel current through the B barrier is determined by the electric field E(0) in the T space at the boundary B barrier/T space. The more substantial is, the tunnel current limitation the higher the electric field E(0) becomes. We have shown that for a space-charge limited current the change from parabolic dispersion to the nonparabolic branch induces narrowing and closing of the frequency windows of transit-time negative conductance starting with the lowest-frequency windows. These narrowing and closing frequency windows become effective only for very high voltages U across the T space: UӷmV S 2 /2e, where m is the effective mass for the parabolic branch and V S is the saturated velocity for the nonparabolic branch. For moderate voltages U, the effects of nonparabolicity are not very substantial. The tunnel current limitation decreases the space-charge effects in the T space and diminishes the role of the detailed electron dispersion relation. As a result, restoration of the frequency windows of transit-time negative conductance and an increase in the value of this negative conductance occur. The implementation of the considered tunnel injection transit time oscillator diode promises to lead to efficient and powerful sources of terahertz range radiation.

show abstract

Section: ͑1͒mentioning

confidence: 99%

“…In the TD, all the regions including the transit space are GaAs grown with low-lying electron L and X valleys. Therefore, in a relatively short transit space of the TD with lϷ300 nm, [6][7][8] there is diffusive electron transport with a drift velocity ϳ(1Ϫ2)ϫ10 7 cm/s. a͒ Author to whom correspondence should be addressed.…”

Section: ͑1͒mentioning

confidence: 99%

Ballistic and quasiballistic tunnel transit time oscillators for the terahertz range: Linear admittance

Gribnikov

Vagidov

Mitin

et al. 2003

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Sources and detectors in this range have aroused considerable interest in the past few years [3][4][5][6][7][8][9][10]. With the advances in MBE techniques, many TUNNETT diodes have been realized [11][12][13]. Recently, Gribnikov et al [14] proposed a new type of ballistic TUNNETT oscillator for the terahertz range and analysed the linear response of the oscillator under small high frequency ac electric field.…”

Section: Introductionmentioning

confidence: 99%

Steady-state and small signal analysis of terahertz ballistic tunnel transit-time oscillator

Lü¹,

Cao

2004

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

We have considered an InGaAs/InAlAs/InP/InGaAs ballistic tunnel transit-time oscillator under dc and small high frequency ac electric field. Using the quantum transmitting boundary method coupled with the Poisson equation, we have studied electron tunnelling through the barrier assuming that the electrons have a nonparabolic dispersion, and have got the steady state field–current characteristics (E–j) of the oscillator. As a result of the small signal analysis based on these characteristics, we find the negative resistance windows, which are the work regions of the oscillator. The windows get much deeper with the increase of the dc electric field. Their frequencies are in the terahertz (THz) range, which may be used to develop efficient and powerful sources of this range.

show abstract