A CW GaAs TUNNETT Diode Source for 100 GHz and Above

Eisele, H.; Kidner, C.; Haddad, G.I.

doi:10.1109/euma.1992.335710

Cited by 3 publications

(1 citation statement)

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“…The peak in output power (35 mW) and efficiency (> 4%) at around 103 GHz occurs close to the design frequency of 100 GHz and confirms that the first order design rules [5] accurately predict the operating frequency of the TUNNETT diodes. It also indicates that the average, high field, high temperature electron drift velocity in GaAs TUNNETT diodes is close to 4.6 x 106 cms -1 [7]. Figure 4 compares the experimental results obtained from the InP Gunn devices with the flat doping profile (grown by CBE) and with the graded doping profile (grown by MOCVD) between about 90GHz and 165 GHz.…”

Section: Fabrication Technologymentioning

confidence: 69%

Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies

Eisele

Kamoua

Haddad

et al. 1993

Archiv f. Elektrotechnik

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The power capabilities of three different two-terminal devices, GaAs IMPATT diodes, inP Gunn devices and GaAs TUNNETT diodes are evaluated. Two different selective etching technologies have been employed to fabricate devices on either a diamond heat sink or an integral heat sink. The reported RF power levels in fundamental mode are 20 mW at 120 GHz and 15 mW at 135 GHz for D-band GaAs IMPATT diodes, 21 mW at 120 GHz, 17 mW at 133 GHz and 8 mW at 155 GHz for D-band InP Gunn devices and up to 35 mW around 103 GHz for W-band GaAs TUNNETT diodes. Typical dc to RF conversion efficiencies range from 0.9% up to over 4.0%, In second harmonic mode power levels of 0.25 mW at 223 GHz were measured from TUNNETT diodes and 0.4 mW at 220 GHz from a Gunn device. Aktive Zweipol-Bauelemente als Lokaloszillatoren fiir rauscharme Empfiingersysteme im Frequenzgebiet der Submillimeterwellen Ubersicht: Die Leistungsf/ihigkeit dreier verschiedener Zweipolbauelemente, GaAs-IMPATT-Dioden, InP-Gunn-Bauelemente und GaAs-TUNNETT-Dioden, wird untersucht. Zwei unterschiedliche Herstellungsverfahren mit selektivem ~tzen wurden eingesetzt, um Bauelemente auf einer Diamant-bzw. integrierten Wfirmesenke herzustellen. Hochfrequenzausgangsleistungen yon 20roW bei 120 GHz und 15 mW bei 135 GHz wurden mit GaAs-IMPATT-Dioden ffir das D-Band erzielt, 21 mW bei 120 GHz, 17 mW bei 133 GHz und 8 mW bei 155 GHz mit InP-Gunn-Bauelementen fiir das D-Band und bis zu 35 mW um 103 GHz mit GaAs-TUN-NETT-Dioden ffir das W-Band. Typische Hochfrequenzwirkungsgrade lagen zwischen 0,9% und fiber 4%. Bei der ersten Oberwelle wurden mit TUNNETT-Dioden HF-Leistungen von 0,25 mW bei 223 GHz gemessen und 0,4 mW bei 220 GHz mit einem Gunn-Bauelement. gies. The experimental results on D-band InP Gunn devices agree well with simulations [3] and indicate that fundamental mode operation can be extended to the upper D-band. Since IMPATT diodes, TUNNETT diodes and Gunn devices are nonlinear devices, this paper also focuses on harmonic power extraction.

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Section: Fabrication Technologymentioning

confidence: 69%