Tunnel transit‐time (tunnett) devices for terahertz sources

Haddad, G.I.; East, J.R.; Kidner, C.

doi:10.1002/mop.4650040109

Cited by 11 publications

(6 citation statements)

References 11 publications

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“…3 915 GHz, vertical scale 10 dB/div, horizontal scale 500 kHz/div, BW 100 kHz summarizes the experimental results for the eleven best devices of the W-band TUNNETT diodes that have been mounted and tested to date. The peak in output power (35 mW) and efficiency (> 4%) at around 103 GHz occurs close to the design frequency of 100 GHz and confirms that the first order design rules [5] accurately predict the operating frequency of the TUNNETT diodes. It also indicates that the average, high field, high temperature electron drift velocity in GaAs TUNNETT diodes is close to 4.6 x 106 cms -1 [7].…”

Section: Fabrication Technologysupporting

confidence: 64%

“…The design of the GaAs D-band single-drift flat-profile IMPATT diodes was based on an extended small-signal model for the avalanche region and a large-signal approximation for the drift region and followed the same procedure as previously used in the design of GaAs W-band diodes [4]. The design of the W-band TUNNETT diodes was based on a simplified large-signal model [5] and GaAs material parameters derived from measurements on heavily doped p++n + junctions and GaAs IMPATT diodes [6].…”

Section: Device Designmentioning

confidence: 99%

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Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies

Eisele

Kamoua

Haddad

et al. 1993

Archiv f. Elektrotechnik

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The power capabilities of three different two-terminal devices, GaAs IMPATT diodes, inP Gunn devices and GaAs TUNNETT diodes are evaluated. Two different selective etching technologies have been employed to fabricate devices on either a diamond heat sink or an integral heat sink. The reported RF power levels in fundamental mode are 20 mW at 120 GHz and 15 mW at 135 GHz for D-band GaAs IMPATT diodes, 21 mW at 120 GHz, 17 mW at 133 GHz and 8 mW at 155 GHz for D-band InP Gunn devices and up to 35 mW around 103 GHz for W-band GaAs TUNNETT diodes. Typical dc to RF conversion efficiencies range from 0.9% up to over 4.0%, In second harmonic mode power levels of 0.25 mW at 223 GHz were measured from TUNNETT diodes and 0.4 mW at 220 GHz from a Gunn device. Aktive Zweipol-Bauelemente als Lokaloszillatoren fiir rauscharme Empfiingersysteme im Frequenzgebiet der Submillimeterwellen Ubersicht: Die Leistungsf/ihigkeit dreier verschiedener Zweipolbauelemente, GaAs-IMPATT-Dioden, InP-Gunn-Bauelemente und GaAs-TUNNETT-Dioden, wird untersucht. Zwei unterschiedliche Herstellungsverfahren mit selektivem ~tzen wurden eingesetzt, um Bauelemente auf einer Diamant-bzw. integrierten Wfirmesenke herzustellen. Hochfrequenzausgangsleistungen yon 20roW bei 120 GHz und 15 mW bei 135 GHz wurden mit GaAs-IMPATT-Dioden ffir das D-Band erzielt, 21 mW bei 120 GHz, 17 mW bei 133 GHz und 8 mW bei 155 GHz mit InP-Gunn-Bauelementen fiir das D-Band und bis zu 35 mW um 103 GHz mit GaAs-TUN-NETT-Dioden ffir das W-Band. Typische Hochfrequenzwirkungsgrade lagen zwischen 0,9% und fiber 4%. Bei der ersten Oberwelle wurden mit TUNNETT-Dioden HF-Leistungen von 0,25 mW bei 223 GHz gemessen und 0,4 mW bei 220 GHz mit einem Gunn-Bauelement. gies. The experimental results on D-band InP Gunn devices agree well with simulations [3] and indicate that fundamental mode operation can be extended to the upper D-band. Since IMPATT diodes, TUNNETT diodes and Gunn devices are nonlinear devices, this paper also focuses on harmonic power extraction.

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Section: Fabrication Technologysupporting

confidence: 64%

Section: Device Designmentioning

confidence: 99%

Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies

Eisele

Kamoua

Haddad

et al. 1993

Archiv f. Elektrotechnik

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“…A 200 GHz TUNNETT has been reported (8), and an output power of 3 mW at 150 GHz has been reported (9). A theoretically analysis of the TUNNEIT oscillator suggests that it may possibly deliver as much as I mW at 1 THz (10). The noise should be much lower than for the IMPATT diode , since there is nothing like the avalanche effect associated with the current through the diode.…”

Section: Gunn and Impatt-oscillatorsmentioning

confidence: 97%

New Solid State Devices and Circuits for Millimeter Wave Applications

Kollberg

1991

21st European Microwave Conference, 1991

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In this paper we will address some new devices and circuits conceptually different to well known microwave devices and circuits. Hence we will briefly discuss devices such as the quantum well diode for oscillators, multipliers and mixers, the back to back Banier xi-n+ (bbBNN) varactor diode for multipliers, the single barier varactor (SBV) diode for multipliers, and new achievements conceming the design and fabrication of Schottky diodes.Concerning circuits, we focus on new approaches for the basic problem of handling large powers at millimeter waves (and microwaves) using solid state devices. A quasioptical design approach with many devices distributed over a surface several wavelengths in dimensions can be used to distibute large power to hundreds of low power devices. This technique is referred to as quasioptical array or grid technique. A few selected recent achievements are presented, demonstrating principles concerning arrays for oscillators, amplifiers, multipliers, phase shifters and mixers. MIRQQ.UCTIQMillimeter wave techniques is becoming more important as new millimeter wave technology emerge and stimulate development of new systems for new applications. In this paper we will briefly discus some "old" devices, but essentially focus on new devices and circuits conceptually different to well known microwave devices and circuits. Hence we will briefly discuss devices such as the quantum well diode for oscillators, multipliers and mixers, the bbBNN varactor diode for multipliers, the single barrier varctor (SBV) diode for multipliers, and new achievements concerning the design and fabrication of Schottky diodes.Concerning circuits, we focus on new approaches for the basic problem of handling large powers at millimeter waves (and microwaves) using solid state devices. High power handling for a single device means that it has to take high voltages and currents leading to break down phenomena and excess heating. Both problems worsen at higher frequencies since the dimensions of essentially any device have to shrink with increasing frequency in order to keep the impedance reasonable and the parasitics of the device low (2,24).An elegant way to improve the power handling is to let many devices be distributed over a surface several wavelengths in dimensions such that quasi-optical techniques can be used to couple the power to the devices (28,35). This technique is referred to as quasioptical array or grid technique. In fact almost any solid state device can be integrated in an array and thereby improve the power handling capacity. Below a few selected recent achievements are presented, demonstrating principles conceming arrays for oscillators, multipliers, phase shifters and mixers. OSCILAIQORaFor applications using millimeter and submillimeter waves, there is a strong demand for solid state high efficiency sources with low and medium output power. It is to day possible to

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“…Now TUNNETT diodes are considered to have better noise and frequency performance than IMPATT diodes due to the fundamental properties of tunnelling [2]. Their better performance allows them to serve as millimetre and submillimetre wave sources up to the terahertz (THz) range [3]. Sources and detectors in this range have aroused considerable interest in the past few years [3][4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Steady-state and small signal analysis of terahertz ballistic tunnel transit-time oscillator

Lü¹,

Cao

2004

J. Phys.: Condens. Matter

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We have considered an InGaAs/InAlAs/InP/InGaAs ballistic tunnel transit-time oscillator under dc and small high frequency ac electric field. Using the quantum transmitting boundary method coupled with the Poisson equation, we have studied electron tunnelling through the barrier assuming that the electrons have a nonparabolic dispersion, and have got the steady state field–current characteristics (E–j) of the oscillator. As a result of the small signal analysis based on these characteristics, we find the negative resistance windows, which are the work regions of the oscillator. The windows get much deeper with the increase of the dc electric field. Their frequencies are in the terahertz (THz) range, which may be used to develop efficient and powerful sources of this range.

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Tunnel transit‐time (tunnett) devices for terahertz sources

Cited by 11 publications

References 11 publications

Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies

Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies

New Solid State Devices and Circuits for Millimeter Wave Applications

Steady-state and small signal analysis of terahertz ballistic tunnel transit-time oscillator

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