Bias circuit instabilities and their effect on the d.c. current-voltage characteristics of double-barrier resonant tunneling diodes

Kidner, C.; Mehdi, Imran; East, J.R.; Haddad, G.I.

doi:10.1016/0038-1101(91)90081-9

Cited by 24 publications

(11 citation statements)

References 10 publications

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“…However, by increasing the input voltage the mirrored load IV-curve is shifted to the right and at appropriate high input voltages we end up with three crossing points and, hence, three possible dc working points of the circuit. The middle crossing point in the NDR region is proven to be unstable as shown in detailed stability analysis including the dynamic behavior of the circuit (Kidner et al, 1991;Chow, 1964). For a stable working point the sum of load and driver conductivity G load , G driver has to be greater than zero, giving the stability criterion G load + G driver > 0, which is clearly violated in the NDR region.…”

Section: Digital Magneto Resistance In Magnetic Mobilesmentioning

confidence: 99%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

916

1,204

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Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. While metal spintronics has already found its niche in the computer industry-giant magnetoresistance systems are used as hard disk read heads-semiconductor spintronics is yet to demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor materials, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field. 72.25.Rb, 75.50.Pp, PACS

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Section: Digital Magneto Resistance In Magnetic Mobilesmentioning

confidence: 99%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

916

1,204

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“…Circuit stabilization is often simpler when R is sufficient to stabilize the circuit [10]. For power generation, however, it is important that positive resistances inside the rf circuit other than the rf load be minimized since the power lost to these resistances is Percent of power absorbed by (R + R3d) = (R3d±R) x 100% (6) For stabilization the ratio R/Rd should be just below 1 so that both inequalities of Eq. 5 can be satisfied.…”

Section: Parameters Effecting Stability and High Frequency Operationmentioning

confidence: 98%

“…al. [6] have experimentally demonstrated the nonlinearity of the device at 2.5 THz. This has led to the proposal of using these devices for very high frequency operation.…”

Section: Introductionmentioning

confidence: 96%

Resonant-tunneling diode stability and its consequences for high-frequency operation

et al. 1990

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AB STRACTThe existence of negative resistance in double barrier resonant tunneling structures has led to the proposal of various applications for these devices. For many of these applications, stability is an important consideration. This paper will discuss the effect that various device parameters have on stability and on the capability of high frequency device operation. It is concluded that the circuit and device conditions required for stable operation greatly reduce the amount of power that can be produced by these devices at microwave and millimeter-wave frequencies.

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“…The depletion region around the gate wires, which extends into the resonant tunneling barrier structure, is illustrated in the lower left part of the figure. Also shown is the DC output from the GTD, the gate bias, V G , is changed in intervals of 0.5 V. The non ideal IV measured in the NDR region is due to bias network oscillations [11]. The arrows indicate how the device is operated as a pulse generator, as described in Section 4.…”

mentioning

confidence: 99%

20 GHz gated tunnel diode based UWB pulse generator

Egard

Ärlelid

Lind

et al. 2009

Phys. Status Solidi (c)

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We demonstrate a pulse generator based on a GaAs‐AlGaAs gated resonant tunneling diode (RTD). This is realized by integrating a third terminal, the gate, into the current path of a RTD. The gate consists of a 200 Å thick tungsten grating buried 300 Å above the RTD. This implementation allows for control of the current through the RTD. By integrating this device in parallel with an on‐chip inductance, a negative differential resistance (NDR) oscillator is formed. It is demonstrated that by using the gate to change the output conductance of the device, the oscillations may be switched on and off, creating short bursts of RF power. This technique allows for rapid quenching of the oscillator, and hence the ability to generate short pulses at high frequency, enabling impulse radio ultra‐wideband communication implementations. The highest demonstrated oscillation frequency is 22 GHz with an output power of –4.1 dBm, and the shortest pulses generated are 1.3 ns. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Bias circuit instabilities and their effect on the d.c. current-voltage characteristics of double-barrier resonant tunneling diodes

Cited by 24 publications

References 10 publications

Semiconductor spintronics

Semiconductor spintronics

Resonant-tunneling diode stability and its consequences for high-frequency operation

20 GHz gated tunnel diode based UWB pulse generator

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