In this letter we report on high-frequency measurements on vertically standing III-V nanowire wrap-gate MOSFETs (metal-oxide-semiconductor field-effect transistors). The nanowire transistors are fabricated from InAs nanowires that are epitaxially grown on a semi-insulating InP substrate. All three terminals of the MOSFETs are defined by wrap around contacts. This makes it possible to perform high-frequency measurements on the vertical InAs MOSFETs. We present S-parameter measurements performed on a matrix consisting of 70 InAs nanowire MOSFETs, which have a gate length of about 100 nm. The highest unity current gain cutoff frequency, f(t), extracted from these measurements is 7.4 GHz and the maximum frequency of oscillation, f(max), is higher than 20 GHz. This demonstrates that this is a viable technique for fabricating high-frequency integrated circuits consisting of vertical nanowires.
AbstractsIn this paper we present a 55 nm gate length Ino.5 3 Gao.4 7 As MOSFET with extrinsic transconductance of 1.9 mS/llm and on-resistance of 199 Ql1m. The self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions.The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 m V /decade, which is attributed to the described low temperature gate-last process scheme.
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