RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates

Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

“…In this paper we demonstrate DC characterization, modeling and RF characterization of FETs consisting of arrays of vertical NWs (a-FETs) [5][6] [7]. Our data for a-FETs show a threefold improvement on earlier data and we achieve transconductance values above 1 mS/µm for individual nanowires.…”

“…The RF characterization is performed using an Aglient E8361A network analyzer from 60 MHz to 40 GHz at a RF power of -27 dBm [5]. For measurements, a-FETs with 192 NWs was chosen on the premises of having a higher absolute g m and a SEM image of the InAs mesa structure of one such device is shown in Fig.…”

“…5b, for which f t = 14.6 GHz and f max = 30.0 GHz at V DS = 1.0 V, and V GS = -0.45 V, and -0.60 V, respectively. The RF data are fitted to a standard MOSFET small-signal model [5] where the parasitic elements are included in Fig. 5c.…”

“…Performing electrostatic simulations of the capacitances of the de-embedded structure of 12x12 µm 2 [5], that is the overlapping source-gate and gate-drain areas, as indicated in Fig. 5a with the overlapping rectangles, the parasitic capacitances C gs,p and C gd,p are determined to 131 fF and 16 fF, respectively.…”

A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETs

“…By extending the frequency range of the transconductance measurements to much higher frequencies, e.g. 10 10 Hz, the entire border trap depth profile may be characterized, including the region adjoining the oxidesemiconductor interface. Furthermore, radio frequency (RF) measurements can be used to reveal the intrinsic transconductance, g mi , as no traps respond at sufficiently high frequencies.…”