Power and stability limitations of resonant tunneling diodes

Kidner, C.; Mehdi, Imran; East, J.R.; Haddad, G.I.

doi:10.1109/22.55778

Cited by 96 publications

(45 citation statements)

References 17 publications

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“…The possible implementation of TD in circuits is strictly coupled to a successful exploitation of the negative-di erential resistance (NDR) characteristics. The low-voltage swing and the instability of the NDR regime limited the use of TD in analogue circuits like oscillators [10]. The NDR characteristics and the peak current are in the TD I -V characteristics two voltage levels at the same current level and both exhibiting positive di erential resistance.…”

Section: Introductionmentioning

confidence: 99%

Circuit and application aspects of tunnelling devices in a MOBILE configuration

Glösekötter

Pacha

Goser

et al. 2003

Circuit Theory & Apps

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SUMMARYIn this paper, circuit and application aspects of di erent monostable-bistable transition logic elements (MOBILEs) are analysed. By taking advantage of the multi-state behaviour of resonant tunnelling devices (RTD) the logic depth and the circuit complexity per logic function is reduced at the gate level. Both, simulation and measurement results prove correct circuit operation in the gigahertz regime and I-O compatibiliy of the logic voltage levels. The scaling laws of the di erent MOBILEs are compared to each other in terms of speed and power dissipation. Detailed SPICE simulations based on experimental data precisely analyse the impact of uctuations on the circuit functionality and performance. This study demonstrates that RTD-based MOBILEs are ready for use in digital circuitry such as linear threshold gates which o er a highly reduced circuit complexity.

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Section: Introductionmentioning

confidence: 99%

Circuit and application aspects of tunnelling devices in a MOBILE configuration

Glösekötter

Pacha

Goser

et al. 2003

Circuit Theory & Apps

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“…However, the relatively narrow voltage range exhibiting negative differential resistance (NDR) limits the oscillation amplitude of RTD-based oscillators [4]. It has been shown that the introduction of series-connected RTDs in place of a unique RTD may contribute to the increased oscillation amplitude by short-pulse or continuous-wave excitations [5,6,7].…”

Section: Introductionmentioning

confidence: 99%

Large-amplitude voltage edge oscillating in a transmission line with regularly spaced series-connected resonant-tunneling diodes

Narahara

Maezawa

2018

IEICE Electron. Express

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Abstract:We investigate the increased amplitude of oscillating pulse edge developed in a transmission line periodically loaded with seriesconnected resonant-tunneling diodes (RTDs). In general, the seriesconnected RTDs in the middle part of the line can be stabilized in one of the multi-stable states that may disable the proper edge oscillation. We find that it becomes possible to design the line to support such a simple oscillating edge by managing the time required for the state transition of bistable states and the oscillation amplitude increases in proportion to the number of series-connected RTDs through SPICE calculations. Keywords: synchronization, oscillation, resonant-tunneling diodes, series-connected devices Classification: Microwave and millimeter wave devices, circuits, and systems References 1This article has been accepted and published on J-STAGE in advance of copyediting. Content is final as presented.

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“…In order to suppress these oscillations, the RTD area must be made so small that the negative resistance is sufficiently large in absolute value. This turns out to limit the output power [11].…”

Section: Sustained Oscillatormentioning

confidence: 96%

A new generation of negative-resistance devices—New developments in ultrahigh-frequency applications based on resonant tunneling elements

Maezawa

2006

Electron. Comm. Jpn. Pt. II

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SUMMARYNegative-resistance elements are important components in sustained oscillator circuits, and form the fundamental basis for various other nonlinear circuits. One of the most promising candidates among these elements for future high-frequency applications is the resonant tunneling diode, due to its high-speed characteristics. In this article we will discuss applications of negative resistance with an emphasis on these resonant tunneling diodes. First we will discuss millimeter and submillimeter waves, where the most fundamental and promising applications are. The first circuits we will investigate are oscillators; we then propose to use these circuits as a starting point for constructing generators of chaotic signals. We then discuss series-and parallel-connected negative-resistance elements, which leads us to the concept of monostable-bistable logic elements (MOBILE). We will describe and explain the origin of various distinctive features of the functioning of these elements and explore one of their most promising applications, that is, as AD converters.

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Power and stability limitations of resonant tunneling diodes

Cited by 96 publications

References 17 publications

Circuit and application aspects of tunnelling devices in a MOBILE configuration

Circuit and application aspects of tunnelling devices in a MOBILE configuration

Large-amplitude voltage edge oscillating in a transmission line with regularly spaced series-connected resonant-tunneling diodes

A new generation of negative-resistance devices—New developments in ultrahigh-frequency applications based on resonant tunneling elements

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