Bias circuit stability has important implications for the study and application of double-barrier resonant tunneling structures. Stability criteria for resonant tunneling diodes are investigated for the common bias circuit topologies. A systematic study was made of the effect of different bias circuit elements on the measured d.c. I-V curves. A double-barrier diode was studied as an example, with experimental and theoretical results. The main results of the paper are (1) stable resonant tunneling diode operation is difficult to obtain, (2) the low-frequency oscillation introduces a characteristic signature in the measured d.c. I-V characteristic.
The potential and capabilities of tunnel transit‐time (TUNNETT) devices for power generation in the 100‐1000 GHz range are presented. The basic properties of these devices and the important material parameters which determine their properties are discussed and criteria for designing such devices are presented. It is shown from a first‐order model that significant amounts of power can be obtained from these devices in the terahertz frequency range.
The power capabilities of three different two-terminal devices, GaAs IMPATT diodes, inP Gunn devices and GaAs TUNNETT diodes are evaluated. Two different selective etching technologies have been employed to fabricate devices on either a diamond heat sink or an integral heat sink. The reported RF power levels in fundamental mode are 20 mW at 120 GHz and 15 mW at 135 GHz for D-band GaAs IMPATT diodes, 21 mW at 120 GHz, 17 mW at 133 GHz and 8 mW at 155 GHz for D-band InP Gunn devices and up to 35 mW around 103 GHz for W-band GaAs TUNNETT diodes. Typical dc to RF conversion efficiencies range from 0.9% up to over 4.0%, In second harmonic mode power levels of 0.25 mW at 223 GHz were measured from TUNNETT diodes and 0.4 mW at 220 GHz from a Gunn device. Aktive Zweipol-Bauelemente als Lokaloszillatoren fiir rauscharme Empfiingersysteme im Frequenzgebiet der Submillimeterwellen Ubersicht: Die Leistungsf/ihigkeit dreier verschiedener Zweipolbauelemente, GaAs-IMPATT-Dioden, InP-Gunn-Bauelemente und GaAs-TUNNETT-Dioden, wird untersucht. Zwei unterschiedliche Herstellungsverfahren mit selektivem ~tzen wurden eingesetzt, um Bauelemente auf einer Diamant-bzw. integrierten Wfirmesenke herzustellen. Hochfrequenzausgangsleistungen yon 20roW bei 120 GHz und 15 mW bei 135 GHz wurden mit GaAs-IMPATT-Dioden ffir das D-Band erzielt, 21 mW bei 120 GHz, 17 mW bei 133 GHz und 8 mW bei 155 GHz mit InP-Gunn-Bauelementen fiir das D-Band und bis zu 35 mW um 103 GHz mit GaAs-TUN-NETT-Dioden ffir das W-Band. Typische Hochfrequenzwirkungsgrade lagen zwischen 0,9% und fiber 4%. Bei der ersten Oberwelle wurden mit TUNNETT-Dioden HF-Leistungen von 0,25 mW bei 223 GHz gemessen und 0,4 mW bei 220 GHz mit einem Gunn-Bauelement. gies. The experimental results on D-band InP Gunn devices agree well with simulations [3] and indicate that fundamental mode operation can be extended to the upper D-band. Since IMPATT diodes, TUNNETT diodes and Gunn devices are nonlinear devices, this paper also focuses on harmonic power extraction.
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