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Hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content further includes nylon 6,6-GaN core-shell nanofibers, proof-of-concept thin film transistors and UV photodetectors fabricated using HCPA-ALD-grown GaN layers, as well as InN thin films deposited by HCPA-ALD using cyclopentadienyl indium and trimethylindium precursors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, 150, 200 and 250 • C. The fabricated ZnO (n)/Si (p) photodetectors (ZnO-Si-PDs) show good electrical rectification characteristics with ON/OFF ratios reaching up to 10 3. Under UV (350 nm wavelength) and visible (475 nm wavelength) light illumination, the ZnO-Si-PDs give photoresponsivity values of 30-37 mA W −1 and 74-80 mA W −1 at 0.5 V reverse bias, respectively. Photoluminescence (PL) spectra of ALD grown ZnO thin films are used to support the results.

Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

Cataloged from PDF version of article.We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical vapor deposition grown indium nitride thin film and are used as optically active absorption region. InN-NCs are sandwiched between thin insulating films to reduce the electrical leakage current. Under -1 V applied bias, the recorded photoresponsivity values within 600-1100-nm wavelength range are as high as 3.05 x 10(-2) mA/W. An ultrathin layer of nanocrystalline InN thin film is, therefore, a promising candidate for NIR detection in large area schemes. © 2014 IEEE

A memory structure containing ultra-small 2-nm lasersynthesized silicon nanoparticles is demonstrated. The Sinanoparticles are embedded between an atomic layer deposited high-k dielectric Al 2 O 3 layer and a sputtered SiO 2 layer. A memory effect due to charging of the Si nanoparticles is observed using high frequency C-V measurements. The shift of the threshold voltage obtained from the hysteresis measurements is around 3.3 V at 10/À10 V gate voltage sweeping. The analysis of the energy band diagram of the memory structure and the negative shift of the programmed C-V curve indicate that holes are tunneling from p-type Si via Fowler-Nordheim tunneling and are being trapped in the Si nanoparticles. In addition, the structures show good endurance characteristic (>10 5 program/erase cycles) and long retention time (>10 years), which make them promising for applications in non-volatile memory devices.

Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal-semiconductor-metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N2/H2 PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH3 PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N2:H2 ambient. © 2014 American Vacuum Society

Abstract. Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are demonstrated. Electrical and optical characteristics of the fabricated devices are investigated. Dark current values as low as 14 pA at a 30 V reverse bias are obtained. Fabricated devices exhibit a 15× UV/VIS rejection ratio based on photoresponsivity values at 200 nm (UV) and 390 nm (VIS) wavelengths. These devices can offer a promising alternative for flexible optoelectronics and the complementary metal oxide semiconductor integration of such devices.