Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures

Tekcan, Burak; Özgit-Akgün, Çaǧla; Bolat, Sami; Bıyıklı, Necmi; Okyay, Ali Kemal

doi:10.1117/1.oe.53.10.107106

Cited by 11 publications

(7 citation statements)

References 23 publications

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“…He et al [ 22 ] directly deposited the PEALD GaN thin films, with an oxygen content of 11.61 at.%, on multilayer graphene in order to improve the performance of GaN-based optical and high-power devices. Tekcan et al [ 44 ] prepared PEALD GaN films at 200 °C and demonstrated the viability of PEALD GaN-based ultraviolet photodetectors with temperature-sensitive substrates used in flexible and transparent optoelectronic devices.…”

Section: Resultsmentioning

confidence: 99%

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

et al. 2022

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Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications. In this study, GaN films are grown using a plasma-enhanced atomic layer deposition (PEALD) with trimethylgallium (TMG) and NH3 plasma. The effect of substrate temperature on growth mechanism and properties of the PEALD GaN films is systematically studied. The experimental results show that the self-limiting surface chemical reactions occur in the substrate temperature range of 250–350 °C. The substrate temperature strongly affects the crystalline structure, which is nearly amorphous at below 250 °C, with (100) as the major phase at below 400 °C, and (002) dominated at higher temperatures. The X-ray photoelectron spectroscopy spectra reveals the unintentional oxygen incorporation into the films in the forms of Ga2O3 and Ga-OH. The amount of Ga-O component decreases, whereas the Ga-Ga component rapidly increases at 400 and 450 °C, due to the decomposition of TMG. The substrate temperature of 350 °C with the highest amount of Ga-N bonds is, therefore, considered the optimum substrate temperature. This study is helpful for improving the quality of PEALD GaN films.

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Section: Resultsmentioning

confidence: 99%

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

et al. 2022

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“…GaN (PE-ALD) [1,8,10,11,13,14,16,20,21,30,35] GaN devices (PE-ALD) [2,4,10,11,17] Nanofibers (PE-ALD) [5,[9][10][11]] Nanostructures (ALD) [18,21] AlGaN (PE-ALD) [1,3] AlN (PE-ALD) [1,5,[19][20][21]29,32] BN (PE-ALD) [5,6,11] InN (PE-ALD) [10,11,15,[19][20][21]33,34] BInN and BGaN (PE-ALD)…”

Section: Materials (And Process) Referencementioning

confidence: 99%

Recent Advances in Hollow Cathode Technology for Plasma-Enhanced ALD—Plasma Surface Modifications for Aluminum and Stainless-Steel Cathodes

Butcher

Georgiev²,

Georgieva³

2021

Coatings

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Recent designs have allowed hollow cathode gas plasma sources to be adopted for use in plasma-enhanced atomic layer deposition with the benefit of lower oxygen contamination for non-oxide films (a brief review of this is provided). From a design perspective, the cathode metal is of particular interest since—for a given set of conditions—the metal work function should determine the density of electron emission that drives the hollow cathode effect. However, we found that relatively rapid surface modification of the metal cathodes in the first hour or more of operation has a stronger influence. Langmuir probe measurements and hollow cathode electrical characteristics were used to study nitrogen and oxygen plasma surface modification of aluminum and stainless-steel hollow cathodes. It was found that the nitridation and oxidation of these metal cathodes resulted in higher plasma densities, in some cases by more than an order of magnitude, and a wider range of pressure operation. Moreover, it was initially thought that the use of aluminum cathodes would not be practical for gas plasma applications, as aluminum is extremely soft and susceptible to sputtering; however, it was found that oxide and nitride modification of the surface could protect the cathodes from such problems, possibly making them viable.

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“…As a matter of fact, the number of ALD GaN reports, focussed mostly on the material properties, is growing in the recent times 53,[89][90][91][92][93][94][95][96] . Some of the reported (and perceived) applications include TFTs [43][44] , sensors, and photodetectors [97][98][99] .…”

Section: Introductionmentioning

confidence: 99%

From radical-enhanced to pure thermal ALD of gallium and aluminium nitrides

Banerjee¹

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Contents xi 6.3 High-pressure (HP) ALD………………………………………………….… 6.3.1 Dependence of incubation time on surface termination…………...… 6.3.2 Control experiments showing the role of-NH terminations and the effect of plasma………………………………………………….…… 6.4 Investigation into the growth on Si and AlN substrates by in-situ SE…….… 6.4.1 The incubation stage……………………………………………….… 6.4.2 The stage of increasing step height…………………………...……… 6.4.3 The stage of stable step height……………………………………..… 6.5 Towards thermal ASALD of GaN………………………………………...… 6.5.1 ALD on patterned AlN /SiO 2 substrate……………………………… 6.5.2 ALD on patterned Si 3 N 4 / SiO 2 / Si substrate …………………..…… 6.6 Conclusions………………………………………………………………..… References………………………………………………………………….……… Appendix 6.1: Wet etching of ALD (Al)GaN layers………………………...… Appendix 6.2: Scanning electron microscope images of GaN ALD performed on the ex-situ patterned AlN/SiO 2 substrate…………………… 7 Thermal ALD of AlN and estimation of layer coalescence…………..… 163 7.1 Introduction………………………………………………………………….. 7.2 Why ALD does not necessarily imply a coalesced layer……………….…… 7.2.1 Types of initial growth in ALD processes…………………………… 7.

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Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures

Cited by 11 publications

References 23 publications

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

Recent Advances in Hollow Cathode Technology for Plasma-Enhanced ALD—Plasma Surface Modifications for Aluminum and Stainless-Steel Cathodes

From radical-enhanced to pure thermal ALD of gallium and aluminium nitrides

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