From radical-enhanced to pure thermal ALD of gallium and aluminium nitrides

Banerjee, Sourish

doi:10.3990/1.9789036548250

Cited by 3 publications

(10 citation statements)

References 30 publications

(44 reference statements)

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“…The layer was found to be N-rich with negligible carbon and about 7% oxygen inside the film. In comparison, T-GaN film is Ga rich with an average composition estimated as Ga 0.53 N 0.39 C 0.01 O 0.07 [223]. Both films confirm to polycrystalline wurzitic structure.…”

Section: Introductionmentioning

confidence: 89%

“…All polycrystalline GaN samples studied in this chapter were of 36 ± 3 nm thickness. For comprehensive account of poly-GaN thin film ALD process, please refer to [223].…”

Section: Methodsmentioning

confidence: 99%

“…The XPS depth profile analysis also found the film to be N-rich. For more detailed description of poly-GaN material characterization, please refer to [223].…”

Section: Materials Characterization Of the Gan Layersmentioning

confidence: 99%

“…In this work, two different types of atomic-layer deposition (ALD) techniques, as developed by S. Banerjee [223] in the joint research project, were utilized to grow poly-GaN thin films. The first technique, referred to as plasma-enhanced ALD (PEALD), utilizes a plasma source to dissociate NH 3 for creating reactive nitrogen radicals during an ALD cycle for the GaN formation.…”

Section: Introductionmentioning

confidence: 99%

“…The second technique, referred to as thermal ALD, relies on pure thermal-mode for GaN formation via the surface adduct mechanism as described in more detail in [223,261]. The NH 3 precursor is then not dissociated by striking a plasma, instead the reaction proceeds by forming a so-called TMG:NH 3 surface adduct.…”

Section: Introductionmentioning

confidence: 99%

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Towards electrostatic doping approaches in ultra-thin body semiconductor materials and devices

Gupta¹

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Section: Introductionmentioning

confidence: 89%

“…All polycrystalline GaN samples studied in this chapter were of 36 ± 3 nm thickness. For comprehensive account of poly-GaN thin film ALD process, please refer to [223].…”

Section: Methodsmentioning

confidence: 99%

“…The XPS depth profile analysis also found the film to be N-rich. For more detailed description of poly-GaN material characterization, please refer to [223].…”

Section: Materials Characterization Of the Gan Layersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Towards electrostatic doping approaches in ultra-thin body semiconductor materials and devices

Gupta¹

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Thin-film (Al)BCN materials synthesized by sequential precursor pulses to mimic atomic layer deposition

et al. 2023

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This work brings novel insights into the existing knowledge on the deposition of films containing boron (B), carbon (C), nitrogen (N), and aluminum (Al). The (Al)BCN films are obtained at low substrate temperatures ( T S) of 250–400 °C from triethylborane, ammonia (NH3), and trimethylaluminum. For BCN films, a nearly similar elemental composition of B0.42C0.41N0.15O0.02, with 1–2 at. % variations, is observed for substantial ranges of T S and NH3-exposure time. This can indicate a similar growth mechanism and/or formation of a single-phase material. While excluding precursor underdosing, a remarkable dependence of growth rate per cycle (GPC) on total gas pressure ( P tot) is observed. The GPC approaches near saturation regime for Ptot between 1 and 10 mbar, for T S = 330–375 °C, which might support the occurrence of a surface-adduct assisted pathway. The level of GPC saturation is influenced by T S. For a wide range of process conditions, N-share in the films slightly varies between 12 and 16 at. %. C-share only changes between 40 and 42 at. %. The attempt to increase N-share by dissociating NH3 into NH2 radicals by hot wire assistance remarkably shows the opposite effect, i.e., a decrease in the N-share from 15 to 6 at. %. This is accompanied by a corresponding increase in the B- and, in particular, C-shares, suggesting that the removal of carbon can occur via the incorporation of nitrogen. For AlBCN films, changing Ptot has a strong effect on their elemental composition. At P tot = 10 mbar, Al-deficient films grow, whereas a P tot of 0.2 mbar leads to mainly AlN-containing films with some inclusions of BN.

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Understanding the role of rf-power on AlN film properties in hollow-cathode plasma-assisted atomic layer deposition

Ilhom

Shukla

Mohammad

et al. 2020

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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In this study, the authors have carried out real-time process monitoring via in situ ellipsometry to understand the impact of rf-plasma power and plasma exposure time on self-limiting aluminum nitride (AlN) growth character and the corresponding film properties. AlN thin films were grown on Si(100) substrates with plasma-enhanced atomic layer deposition using trimethyl-aluminum (TMA) as a metal precursor and Ar/N2/H2 plasma as a coreactant. Saturation experiments have been employed in the range of 25–200 W plasma power and 30–120 s plasma exposure time. In situ multiwavelength ellipsometry identified single chemical adsorption (chemisorption) and plasma-assisted ligand removal events, as well as changes in growth per cycle (GPC) with respect to plasma power. The real-time dynamic in situ monitoring study revealed that GPC and TMA chemisorption thickness gain exhibited plasma power dependent saturation behavior. The amount of chemisorption saturated at ∼2.3 Å for higher rf-power levels, while for 25 and 50 W it went below 1.0 Å, which is mainly attributed to incomplete ligand removal. Besides in situ characterization, ex situ measurements to identify optical, structural, and chemical properties were also carried out on 500-cycle AlN films as a function of plasma power. AlN samples displayed a single-phase hexagonal wurtzite crystal structure with (002) preferred orientation for 150 and 200 W, while the dominant orientation shifted toward (100) at 100 W. 50 W and lower rf-power levels resulted in amorphous material with no apparent crystal signature. Furthermore, it was found that when the plasma exposure time was increased from 30 to 120 s for 25 and 50 W, the amount of chemisorption exceeded the thickness gain values recorded for 150–200 W (∼2.4 Å). However, such a recovery in the chemisorption thickness gain did not restore the crystallinity as the AlN films grown at sub-50 W showed amorphous character independent of plasma exposure time.

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From radical-enhanced to pure thermal ALD of gallium and aluminium nitrides

Cited by 3 publications

References 30 publications

Towards electrostatic doping approaches in ultra-thin body semiconductor materials and devices

Towards electrostatic doping approaches in ultra-thin body semiconductor materials and devices

Thin-film (Al)BCN materials synthesized by sequential precursor pulses to mimic atomic layer deposition

Understanding the role of rf-power on AlN film properties in hollow-cathode plasma-assisted atomic layer deposition

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