Tapered InP nanowire arrays for efficient broadband high-speed single-photon detection

Gibson, S. J.; Kasteren, Brad van; Tekcan, Burak; Cui, Yifu; Dam, Dick van; Haverkort, J.E.M.; Bakkers, Erik P. A. M.; Reimer, Michael E.

doi:10.1038/s41565-019-0393-2

Cited by 77 publications

(66 citation statements)

References 52 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[ 5–10 ] With this in mind, various low‐dimensional nanostructures, especially nanowires (NWs) and two‐dimensional (2D) materials, have been extensively investigated in the past few years. [ 11–16 ] For example, Hu and co‐workers fabricated IR detectors based on parallel GaSb NW arrays that exhibited a photosensitivity of 4.5 with rise and decay times of 195.1 and 380.4 µs, respectively. [ 13 ] Many of IR detectors have been recently built on various 2D semiconducting nanostructures with varying photosensitivities, response speeds, etc.…”

Section: Figurementioning

confidence: 99%

An Integrated Flexible All‐Nanowire Infrared Sensing System with Record Photosensitivity

et al. 2020

View full text Add to dashboard Cite

investigated in the past few years. [11][12][13][14][15][16] For example, Hu and co-workers fabricated IR detectors based on parallel GaSb NW arrays that exhibited a photosensitivity of 4.5 with rise and decay times of 195.1 and 380.4 µs, respectively. [13] Many of IR detectors have been recently built on various 2D semiconducting nanostructures with varying photosensitivities, response speeds, etc. However, the performance of such devices, especially in terms of photosensitivity, is still quite low and cannot meet practical requirements. [17][18][19] To enhance the photosensitivity and enable the performance to reach a suitable level for commercial IR detector and imaging systems, [20] external amplification circuits are often utilized to improve the processing efficiency and image recognition rate. [21,22] However, the complex circuits of such IR systems, including IR detectors, external amplifiers, and processing units, introduce challenges with respect to power consumption, device integration, and noise processing. Therefore, new and highly compacted integrated IR systems with on-chip amplifying units are highly desirable for large-scale implementation and fault-tolerant processing in IR imaging.In this work, a simple and highly integrated IR detection amplification (IRDA) system was designed for high-performance IR imaging applications. A Ga-doped In 2 O 3 NW-based field effect transistor (FET) was integrated into a flexible all-NW IRDA system, and was found to enhance the photosensitivity of the system by several orders of magnitude. The resulting system exhibited a high photosensitivity, external quantum efficiency (EQE), and detectivity under 1342 nm light irradiation, with values as high as 7.6 × 10 4 , 1508%, 4.9 × 10 12 Jones, respectively. Furthermore, the contrast imaging of 1342 nm IR light in a 10 × 10 device array was significantly improved by integrating the IRDA system. As a proof-of-concept, the IRDA system array is used here to increase the accuracy and processing efficiency of subsequent image recognition by artificial neural network (ANN) training. These results suggest that an all-NW based IRDA system has significant potential for application in future flexible IR imaging technologies.Visual perception is an important part of human perception, providing an essential bridge between human beings and external information. [23] To simulate and expand the functionality of human vision, it is critical to obtain clear image information. Generally, the human retina detects visual Infrared (IR) photodetectors are a key optoelectronic device and have thus attracted considerable research attention in recent years. Photosensitivity is an increasingly important device performance parameter for nanoscale photodetectors and image sensors, as it determines the ultimate imaging quality and contrast. However, photosensitivities of state-of-the-art lowdimensional nanostructure-based IR detectors are considerably low, limiting their practical applications. Herein, a biomimetic IR detection amplification (IRDA)...

show abstract

Section: Figurementioning

confidence: 99%

An Integrated Flexible All‐Nanowire Infrared Sensing System with Record Photosensitivity

et al. 2020

View full text Add to dashboard Cite

show abstract

“… 1 − 5 In fact, nanocomposite or nanostructured building blocks can now be found or have been proposed in many of these devices. 6 − 9 However, interface effects are becoming or, as in layered semiconductor solar cells, already are the main limitation of efficiency. 10 − 13 …”

mentioning

confidence: 99%

Lock-in Ultrafast Electron Microscopy Simultaneously Visualizes Carrier Recombination and Interface-Mediated Trapping

Garming

Bolhuis

Conesa-Boj

et al. 2020

J. Phys. Chem. Lett.

View full text Add to dashboard Cite

Visualizing charge carrier flow over interfaces or near surfaces meets great challenges concerning resolution and vastly different time scales of bulk and surface dynamics. Ultrafast or four-dimensional scanning electron microscopy (USEM) using a laser pump electron probe scheme circumvents the optical diffraction limit, but disentangling surface-mediated trapping and ultrafast carrier dynamics in a single measurement scheme has not yet been demonstrated. Here, we present lock-in USEM, which simultaneously visualizes fast bulk recombination and slow trapping. As a proof of concept, we show that the surface termination on GaAs, i.e., Ga or As, profoundly influences ultrafast movies. We demonstrate the differences can be attributed to trapping-induced surface voltages of approximately 100–200 mV, which is further supported by secondary electron particle tracing calculations. The simultaneous visualization of both competing processes opens new perspectives for studying carrier transport in layered, nanostructured, and two-dimensional semiconductors, where carrier trapping constitutes a major bottleneck for device efficiency.

show abstract

“…Silicon technology is mainly utilized in optical filters [138][139][140], switches [141][142][143], delay lines [144][145][146], and modulators [147][148][149][150][151], thanks to its low propagation loss. On the other hand, III/V materials have been widely applied to on-chip lasers [152,153] and photodetectors [154,155], due to their direct bandgap. The emerging of novel technology, such as the 5G net [156], high-performance computing [157], and artificial intelligence [158], has driven the industry evolution with an even higher demand for the data communication capacity in the future.…”

Section: Plasmon-enhanced Photonic Devices Based On 2d Materialsmentioning

confidence: 99%

2D materials integrated with metallic nanostructures: fundamentals and optoelectronic applications

et al. 2020

View full text Add to dashboard Cite

Abstract Due to their novel electronic and optical properties, atomically thin layered two-dimensional (2D) materials are becoming promising to realize novel functional optoelectronic devices including photodetectors, modulators, and lasers. However, light–matter interactions in 2D materials are often weak because of the atomic-scale thickness, thus limiting the performances of these devices. Metallic nanostructures supporting surface plasmon polaritons show strong ability to concentrate light within subwavelength region, opening thereby new avenues for strengthening the light–matter interactions and miniaturizing the devices. This review starts to present how to use metallic nanostructures to enhance light–matter interactions in 2D materials, mainly focusing on photoluminescence, Raman scattering, and nonlinearities of 2D materials. In addition, an overview of ultraconfined acoustic-like plasmons in hybrid graphene–metal structures is given, discussing the nonlocal response and quantum mechanical features of the graphene plasmons and metals. Then, the review summarizes the latest development of 2D material–based optoelectronic devices integrated with plasmonic nanostructures. Both off-chip and on-chip devices including modulators and photodetectors are discussed. The potentials of hybrid 2D materials plasmonic optoelectronic devices are finally summarized, giving the future research directions for applications in optical interconnects and optical communications.

show abstract

Tapered InP nanowire arrays for efficient broadband high-speed single-photon detection

Cited by 77 publications

References 52 publications

An Integrated Flexible All‐Nanowire Infrared Sensing System with Record Photosensitivity

An Integrated Flexible All‐Nanowire Infrared Sensing System with Record Photosensitivity

Lock-in Ultrafast Electron Microscopy Simultaneously Visualizes Carrier Recombination and Interface-Mediated Trapping

2D materials integrated with metallic nanostructures: fundamentals and optoelectronic applications

Contact Info

Product

Resources

About