Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

Bolat, Sami; Özgit-Akgün, Çaǧla; Tekcan, Burak; Bıyıklı, Necmi; Okyay, Ali Kemal

doi:10.1063/1.4884061

Cited by 21 publications

(19 citation statements)

References 22 publications

(20 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Flexible electronics is such a field which can be utilized in wearable and implantable devices including chemical and optical sensors, active matrix displays with integrated thin-film transistors (TFT), etc. ZnO and GaN have been the main materials of choice for the development of ALD-grown active device layers for TFT, photodetector, and sensors [397][398][399][400][401].…”

Section: Applications Of Ald-grown Nanostructured Semiconductorsmentioning

confidence: 99%

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Bıyıklı

Haider

2017

Semicond. Sci. Technol.

View full text Add to dashboard Cite

In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/ quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

show abstract

Section: Applications Of Ald-grown Nanostructured Semiconductorsmentioning

confidence: 99%

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Bıyıklı

Haider

2017

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…An additional advantage of ALD is that it allows to reduce the deposition temperature of many processes 10 . Recently, ALD grown GaN devices such as thin-film transistors have been successfully demonstrated [11][12][13] with a reasonable performance considering their polycrystalline nature. However so far there have been no reports on vertical ALD-GaN-on-Si heterojunctions in active devices.…”

Section: Introductionmentioning

confidence: 99%

Charge carrier transport and electroluminescence in atomic layer deposited poly-GaN/c-Si heterojunction diodes

Gupta

Banerjee

Dutta

et al. 2018

Journal of Applied Physics

View full text Add to dashboard Cite

In this work, we study the charge carrier transport and electroluminescence (EL) in thin-film polycrystalline (poly-) GaN/c-Si heterojunction diodes realized using a plasma enhanced atomic layer deposition (PE-ALD) process. The fabricated poly-GaN/p-Si diode with a native oxide at the interface showed a rectifying behavior (I on /I off ratio ∼ 10 3 at ±3 V) with current-voltage characteristics reaching an ideality factor n of ∼ 5.17. The areal (J a ) and peripheral (J p ) components of the current density were extracted and their temperature dependencies were studied. The space charge limited current (SCLC) in the presence of traps is identified as the dominant carrier transport mechanism for J a in forward bias. An effective trap density of 4.6x10 17 /cm 3 at a trap energy level of 0.13 eV below the GaN conduction band minimum was estimated by analyzing J a . Other basic electrical properties of the material such as free carrier concentration, density of states in the conduction band, electron mobility and dielectric relaxation time were also determined from the current-voltage analysis in the SCLC regime. Further, infrared EL corresponding to the Si bandgap was observed from the fabricated diodes. The observed EL intensity from the GaN/p-Si heterojunction diode is ∼ 3 orders of magnitude higher as compared to the conventional Si only counterpart. The enhanced infrared light emission is attributed to the improved injector efficiency of the GaN/Si diode because of the wide bandgap of the poly-GaN layer and resulting band discontinuity at the GaN/Si interface.

show abstract

“…52,53 Recently, we deposited wurtzite GaN thin films with low impurity concentrations (O, C o 1 at%) in a self-limiting fashion at 200 1C using an ALD system coupled with a hollow cathode plasma source. 54 The (opto)electronic properties of the GaN thin films were studied via fabrication of transistors 55 and UV photodetectors. 56 Here we performed the fabrication of flexible polymer-GaN organic-inorganic core-shell nanofibers using the combination of electrospinning and hollow cathode plasma-assisted ALD (HCPA-ALD) processes.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of flexible polymer–GaN core–shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition

et al. 2015

View full text Add to dashboard Cite

show abstract

Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

Abstract: Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

Cited by 21 publications

References 22 publications

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Charge carrier transport and electroluminescence in atomic layer deposited poly-GaN/c-Si heterojunction diodes

Fabrication of flexible polymer–GaN core–shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition

Contact Info

Product

Resources

About