A Near-Infrared Range Photodetector Based on Indium Nitride Nanocrystals Obtained Through Laser Ablation

Tekcan, Burak; Alkis, Sabri; Alevli, Mustafa; Dietz, N.; Ortaç, Bülend; Bıyıklı, Necmi; Okyay, Ali Kemal

doi:10.1109/led.2014.2336795

Cited by 36 publications

(17 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus, smaller InN-NCs were obtained by using lower laser energy in ablation procedure. In a previous study, we showed that the lower pulse energies with nanosecond laser ablation of InN thin film led to a decrease in the nanoparticle size distribution but the smaller nanoparticles were obtained with larger energies [22]. The target material has a great importance since the laser pulse with higher energy result in much more ablation process on the solid target while the increase in the energy did not affect the nanoparticle sizes after a certain value with the continuously stirred sample powder sample.…”

Section: Effects Of Laser Energy and Ablation Duration On Inn-ncsmentioning

confidence: 91%

“…The average diameter of the produced InN-NCs was 10 nm [18]. These InN-NCs were shown to have applications such as a near infrared range photodetector [22] and charge trapping memory cells [23]. However, the starting material was HPCVD-grown InN thin film and the starting material, either a bulk target or a suspension, affects the final nanoparticle size in PLAL.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution

et al. 2017

View full text Add to dashboard Cite

electron transport properties and direct band gap structure, InN is a promising candidate for high-speed optoelectronic devices, broad-spectrum solar cells, high electron mobility transistors, near infrared light emitting diodes (LEDs) and high-speed laser diodes [2][3][4]. Furthermore, its nontoxic nature and infrared emission properties enable InN to be used in biological and medical applications [5]. Besides these advantageous properties of InN material, its nanostructures have been widely studied due to their different characteristics depending on the dimensionality and size, which allow the applications in nanoscale electronic and optoelectronic devices [6,7].InN crystallizes in two different structures: stable hexagonal (wurtzite) structure and metastable cubic structure. When compared to hexagonal InN, cubic InN possesses smaller band gap and superior electronic properties due to its isotropic lattice and lower phonon scattering [8]. However, the production of cubic InN-NCs is quite a challenging process due to its thermodynamically unstable nature [9]. Previous studies showed a number of techniques viable for the synthesis of InN-NCs mainly having hexagonal structure. Ambient pressure and low-temperature liquid phase was proposed as a suitable method for the synthesis of nanoparticles having low decomposition temperatures. It was shown that wurtzite InN-NCs having 6.2 nm average diameter are successfully produced using this method. These colloidal wurtzite InN-NCs were post-treated with nitric acid to get rid of the metallic indium byproduct and finally InN nano-powder was obtained [10]. Moreover, activated reactive evaporation and nitrogen plasma annealing methods were proposed for the successful production of wurtzite InN-NCs and InN nanorods, respectively. It was suggested that the technique is applicable to produce InN-NCs by using low temperatures from indium nanostructures obtained by different techniques [11]. Xiao et al.Abstract Nanostructures of InN have been extensively investigated since nano-size provides a number of advantages allowing applications in nanoscale electronic and optoelectronic devices. It is quite important to obtain pure InN nanocrystals (InN-NCs) to reveal the characteristic features, which gain interest in the literature. Here, we proposed a new approach for the synthesis of ultra-small hexagonal InN-NCs by using suspension of micron-sized InN powder in ethanol with pulsed laser ablation method. The liquid environment, laser energy and ablation time were optimized and a post-synthesis treatment, centrifugation, was performed to achieve InN-NCs with the smallest size. Besides, the micron-sized InN powder suspension, as a starting material, enabled us to obtain InN-NCs having diameters smaller than 5 nm. We also presented a detailed characterization of InN-NCs and demonstrated that the formation mechanism mainly depends on the fragmentation due to laser irradiation of the suspension.

show abstract

Section: Effects Of Laser Energy and Ablation Duration On Inn-ncsmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution

et al. 2017

View full text Add to dashboard Cite

show abstract

“…They also have a low band-gap energy, which is in the range of 0.7-0.9 eV, and they have unique electronic features such as high electron mobility, which allows fabricating high speed and high frequency electronic devices [76]. A near-infrared ranged photodetector has been demonstrated by using InN-NCs [77]. InN-NCs are generated by PLAL method from Laser Ablation -From Fundamentals to Applications 158 chemical vapor-deposited thin film.…”

Section: A Near-infrared Range Photodetector Based On Indium Nitride mentioning

confidence: 99%

“…(a) TEM image of InN-NCs, (b) schematic of photodetector, and (c) photosensitivity versus wavelength graph[77].…”

mentioning

confidence: 99%

Nanoparticles, Nanocrystals, and Nanocomposites Produced with Pulsed Laser Ablation and Their Applications

Ortaç¹,

Şimşek²,

Kurşungöz³

2017

Laser Ablation - From Fundamentals to Applications

View full text Add to dashboard Cite

In the last few decades, nanoparticles have become key components in a variety of applications in nanotechnology, nanoengineering, and nanoscience. Pulsed laser ablation in liquids (PLAL) method is frequently preferred for fast and pure nanoparticle generation. There exists a wide range of metal and semi-conductor nanoparticles that are successfully synthesized by PLAL method. In our research, nanoparticle synthesis of different materials and their applications are pursued. After nanoparticle synthesis, the application research proceeds and the scope of the research spans many subjects ranging from sensor realization to biological applications.

show abstract

“…III-V semiconductor nitrides, such as GaN, InN, and AlN, are extensively studied for their applications in electronics and optoelectronics. Among these nitrides, Indium nitride (InN) has the smallest bandgap (~0.7 eV), which makes it potentially interesting for solar cells and infrared detectors [1,2,[6][7][8]. Moreover, theoretical mobility of electrons at room temperature can be as high as 14000 cm 2 /V⋅s in InN [3], which is order of magnitude larger than that of GaN (1000 cm 2 /V⋅s) [4].…”

Section: Introductionmentioning

confidence: 99%

Network of vertically c-oriented prismatic InN nanowalls grown on c-GaN/sapphire template by chemical vapor deposition technique

Barick

Saroj

Prasad

et al. 2018

Journal of Crystal Growth

View full text Add to dashboard Cite

Networks of vertically c-oriented prism shaped InN nanowalls, are grown on c-GaN/sapphire templates using a CVD technique, where pure indium and ammonia are used as metal and nitrogen precursors. A systematic study of the growth, structural and electronic properties of these samples shows a preferential growth of the islands along [ 0 2 11 ] and [0001] directions leading to the formation of such a network structure, where the vertically [0001] oriented tapered walls are laterally align along one of the three [ 0 2 11 ] directions. Inclined facets of these walls are identified as r-planes [( 02 1 1 )-planes] of wurtzite InN. Onset of absorption for these samples is observed to be higher than the band gap of InN suggesting a high background carrier concentration in this material. Study of the valence band edge through XPS indicates the formation of positive depletion regions below the rplane side facets of the walls. This is in contrast with the observation for c-plane InN epilayers, where electron accumulation is often reported below the top surface.

show abstract

A Near-Infrared Range Photodetector Based on Indium Nitride Nanocrystals Obtained Through Laser Ablation

Cited by 36 publications

References 18 publications

Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution

Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution

Nanoparticles, Nanocrystals, and Nanocomposites Produced with Pulsed Laser Ablation and Their Applications

Network of vertically c-oriented prismatic InN nanowalls grown on c-GaN/sapphire template by chemical vapor deposition technique

Contact Info

Product

Resources

About