A facile and novel technique for the fabrication of pressure sensors is reported based on the hybridization of one-dimensional nanomaterials and two-dimensional graphene film. In particular, piezoelectric pressure sensors are fabricated by using vertically aligned and position- and dimension-controlled ZnO nanotube arrays grown on graphene layers. Graphene layers act not only as substrates for catalyst-free growth of high-quality ZnO nanotubes but also as flexible conduction channels connecting ZnO nanotubes and metal electrodes. Freestanding and flexible sensors have been efficiently obtained via mechanical lift-off of hybrid ZnO nanotube/graphene film structures and by exploiting the weak van der Waals forces existing between the graphene film and the original substrates. A prototype of such devices shows a high pressure sensitivity (−4.4 kPa−1), which would enable the detection of weak flows of inert gas. The relatively low wall thickness and large length of the ZnO nanotubes suggest a relatively high sensitivity to external pressures. The obtained nanotube sensors are attached to the philtrum and wrist of a volunteer and used to monitor his breath and heart rate. Overall, the prototype hybrid sensing device has great potential as wearable technology, especially in the sector of advanced healthcare devices.
This paper describes the fabrication process and characteristics of dimension- and position-controlled gallium nitride (GaN) microstructure arrays grown on graphene films and their quantum structures for use in flexible light-emitting device applications. The characteristics of dimension- and position-controlled growth, which is crucial to fabricate high-performance electronic and optoelectronic devices, were investigated using scanning and transmission electron microscopes and power-dependent photoluminescence spectroscopy measurements. Among the GaN microstructures, GaN microrods exhibited excellent photoluminescence characteristics including room-temperature stimulated emission, which is especially useful for optoelectronic device applications. As one of the device applications of the position-controlled GaN microrod arrays, we fabricated light-emitting diodes (LEDs) by heteroepitaxially growing InxGa1−xN/GaN multiple quantum wells (MQWs) and a p-type GaN layer on the surfaces of GaN microrods and by depositing Ti/Au and Ni/Au metal layers to prepare n-type and p-type ohmic contacts, respectively. Furthermore, the GaN microrod LED arrays were transferred onto Cu foil by using the chemical lift-off method. Even after being transferred onto the flexible Cu foil substrate, the microrod LEDs exhibited strong emission of visible blue light. The proposed method to enable the dimension- and position-controlled growth of GaN microstructures on graphene films can likely be used to fabricate other high-quality flexible inorganic semiconductor devices such as micro-LED displays with an ultrahigh resolution.
Growth of InN epilayers on c-plane sapphire substrate by chemical vapor deposition technique using pure indium metal and ammonia as precursors has been systematically explored. It has been found that [0001] oriented indium nitride epitaxial layers with smooth surface morphology can be grown on c-plane sapphire substrates by optimizing the growth conditions. Bandgap of the film is observed to be Burstein–Moss shifted likely to be due to high background electron concentration. It has been found that the concentration of this unintentional doping decreases with the increase in the growth temperature and the ammonia flux. Epitaxial quality on the other hand deteriorates as the growth temperature increases. Moreover, the morphology of the deposited layer has been found to change from flat top islands to faceted mounds as the flow rate of ammonia increases. This phenomenon is expected to be related to the difference in surface termination character at low and high ammonia flow rates.
High quality c-axis oriented n-type ZnO epitaxial films are grown on p-type c-GaN/sapphire templates using a chemical vapor deposition technique where metallic zinc is used as the Zn source. n-ZnO/p-GaN heterojunctions were thus formed and show rectifying behaviour with a turn-on voltage of ∼2.4V and a very low leakage current of 1×10 −11 A. Study of the spectral distribution of the photo response properties of these heterostructures shows a maximum at a wavelength of 366nm with a peak responsivity of ∼0.4mA/W at zero bias condition. The peak responsivity increases further with the applied forward bias and reaches ∼191mA/W at 1V. The spectral profile shows a sharp reduction in responsivity for wavelengths larger than ≈400nm, making these devices suitable for application in solar blind UV detection. These devices are also found to show a fast response with a rise/decay time of only a few milliseconds. The study also reveals that the photo-responsivity of these devices depends crucially on the microcrystalline quality of the ZnO layers.
We report the fabrication of individually addressable, high-density, vertical zinc oxide (ZnO) nanotube pressure sensor arrays. High-sensitivity and flexible piezoelectric sensors were fabricated using dimension- and position-controlled, vertical, and free-standing ZnO nanotubes on a graphene substrate. Significant pressure/force responses were achieved from small devices composed of only single, 3 × 3, 5 × 5, and 250 × 250 ZnO nanotube arrays on graphene. An individually addressable pixel matrix was fabricated by arranging the top and bottom electrodes of the sensors in a crossbar configuration. We investigated the uniformity and robustness of pressure/force spatial mapping by considering the pixel size, the number of ZnO nanotubes in each pixel, and the lateral dimensions of individual ZnO nanotubes. A spatial resolution as high as 1058 dpi was achieved for a Schottky diode-based force/pressure sensor composed of ZnO nanotubes on a flexible substrate. Additionally, we confirmed the excellent flexibility and electrical robustness of the free-standing sensor arrays for high-resolution tactile imaging. We believe that this work opens important opportunities for 1D piezoelectric pressure/force sensor arrays with enormous applications in human-electronics interfaces, smart skin, and micro- and nanoelectromechanical systems.
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