Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

Bolat, Sami; Tekcan, Burak; Özgit-Akgün, Çaǧla; Bıyıklı, Necmi; Okyay, Ali Kemal

doi:10.1116/1.4903365

Cited by 14 publications

(11 citation statements)

References 23 publications

(39 reference statements)

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“…[12][13][14]. In this sense, hollow and multi-hollow (H and MH) cathodes were proposed to be utilized as a light source [15], active media for gas lasers [16], sources of electrons [17], or for thin films deposition and large area surface treatment [18][19][20], and recently for the treatment of nanoparticles, plasma polymerization and nanocomposite fabrication [21]. This kind of discharges, produced from such specific geometries, is characterized by a high electron density and a low electron temperature.…”

Section: Introductionmentioning

confidence: 99%

Plasma parameters of RF capacitively coupled discharge: comparative study between a plane cathode and a large hole dimensions multi-hollow cathode

Djerourou

Djebli

Ouchabane

2019

Eur. Phys. J. Appl. Phys.

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This work deals with a comparative study of plasma discharge generated by two geometrical configurations of cathodes through an investigation of their plasma parameters. A large hole diameter and depth (D = 40 mm, W = 50 mm) multi-hollow (MH) cathode compared with a plane (PL) cathode are presented for argon capacitively coupled radiofrequency discharge. The electrical characteristics of MH and PL cathodes have been measured in terms of the self-bias voltage (Vdc) while the Langmuir probe was used to measure electron density (ne) and electron temperature (Te) for a wide range of gas pressure (60–400 mTorr) and incident power (50–300 W). It is found that the hollow cathode effect (HCE) is optimum at 60 mTorr with 220 mTorr as a critical gas pressure for which a transition from HCE to insufficient HCE is seen. The electron temperature varies from 3 to 5 eV in the case of MH and PL cathodes with respect to incident power and gas pressure.

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Section: Introductionmentioning

confidence: 99%

Plasma parameters of RF capacitively coupled discharge: comparative study between a plane cathode and a large hole dimensions multi-hollow cathode

Djerourou

Djebli

Ouchabane

2019

Eur. Phys. J. Appl. Phys.

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“…Flexible electronics is such a field which can be utilized in wearable and implantable devices including chemical and optical sensors, active matrix displays with integrated thin-film transistors (TFT), etc. ZnO and GaN have been the main materials of choice for the development of ALD-grown active device layers for TFT, photodetector, and sensors [397][398][399][400][401].…”

Section: Applications Of Ald-grown Nanostructured Semiconductorsmentioning

confidence: 99%

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Bıyıklı

Haider

2017

Semicond. Sci. Technol.

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In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/ quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

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“…As a matter of fact, the number of ALD GaN reports, focussed mostly on the material properties, is growing in the recent times 53,[89][90][91][92][93][94][95][96] . Some of the reported (and perceived) applications include TFTs [43][44] , sensors, and photodetectors [97][98][99] .…”

Section: Introductionmentioning

confidence: 99%

From radical-enhanced to pure thermal ALD of gallium and aluminium nitrides

Banerjee¹

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Contents xi 6.3 High-pressure (HP) ALD………………………………………………….… 6.3.1 Dependence of incubation time on surface termination…………...… 6.3.2 Control experiments showing the role of-NH terminations and the effect of plasma………………………………………………….…… 6.4 Investigation into the growth on Si and AlN substrates by in-situ SE…….… 6.4.1 The incubation stage……………………………………………….… 6.4.2 The stage of increasing step height…………………………...……… 6.4.3 The stage of stable step height……………………………………..… 6.5 Towards thermal ASALD of GaN………………………………………...… 6.5.1 ALD on patterned AlN /SiO 2 substrate……………………………… 6.5.2 ALD on patterned Si 3 N 4 / SiO 2 / Si substrate …………………..…… 6.6 Conclusions………………………………………………………………..… References………………………………………………………………….……… Appendix 6.1: Wet etching of ALD (Al)GaN layers………………………...… Appendix 6.2: Scanning electron microscope images of GaN ALD performed on the ex-situ patterned AlN/SiO 2 substrate…………………… 7 Thermal ALD of AlN and estimation of layer coalescence…………..… 163 7.1 Introduction………………………………………………………………….. 7.2 Why ALD does not necessarily imply a coalesced layer……………….…… 7.2.1 Types of initial growth in ALD processes…………………………… 7.

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Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

Cited by 14 publications

References 23 publications

Plasma parameters of RF capacitively coupled discharge: comparative study between a plane cathode and a large hole dimensions multi-hollow cathode

Plasma parameters of RF capacitively coupled discharge: comparative study between a plane cathode and a large hole dimensions multi-hollow cathode

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

From radical-enhanced to pure thermal ALD of gallium and aluminium nitrides

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