There a r e many Considerable discrepancies in the literature data concerning the optical properties of gallium antimonide crystals /1 to 3 / . The complexity of studying the gallium antimonide crystals i s increased by the presence of a very low second minimum of the conduction band lying only by 0.08 eV higher than the bottom of the main minimum. Below this minimum doping with various admixtures involves the formation of levels whose energetic positions substantially depend on the kind of admixture / 4 , 5/.In the present paper the dependence of the forbidden optical band gap in tellurium and selenium doped gallium antimonide crystals is studied. The investigations were carried out at 77 and 300 K.The experimental values of the forbidden optical band gap were determined from the spectral dependence of the absorption coefficient in the region of the fundamental band edge. The theoretical calculations were carried out with strict account of the influence of doping on the width of the forbidden band and the Fermi level position / 6 , 7 / .The results of comparing the experimental and the theoretically calculated valhes a r e given in Fig. 1, 2. These figures show that agreement between experiment and theory exists only at concentrations not greater than x. 5x10 17 -3 cm at 300 K and -3 7 x 1 0~~ c m at 77K. At higher concentrations the experimental dependences nium doped crystals differs quite distinctly. 25 A 1 085 -,F ' x E = f(n) greatly differ from the theoretically calculated ones. The behaviour of E O P = f(n) for tellurium and sele-O P $4 , x us 080 k Fig. 1. Dependence of Ecally calculated dependence is shown by a continuous line = f(n) for crystals doped with 0 75 tellurium (-+) and selen@m (-X-) at 77 K. The theoreti-7o17 loB 1oJ9 n (~17131-
Investigations of the optical transmission in n‐Type InSb crystals doped with selenium and tellurium were carried out. Differences in transmission spectra of crystals doped by different admixtures are disclosed. The obtained results are explained by means of the Moss‐Burstein effect theory. The discrepancy between experiment and theory is explained by the influence of electron‐electron and electron‐impurity ion interactions in heavily doped crystals on the Fermi level position.
Zur Untersuchung des Streumechanismus für die Elektronen wurde die Beweglichkeit an n‐leitenden InSb‐Kristallen im Temperaturbereich von 77 bis 773 °K und bei Störstellenkonzentration von 1015 bis 7 · 1018 cm−3 gemessen. Die erhaltenen Ergebnisse werden mit theoretischen Überlegungen, die die nichtparabolische Form des Leitungsbandes berücksichtigen, verglichen.
Die Ergebnisse zeigen, daß die Elektronen im n‐leitenden InSb an ionisierten Störstellen, optischen Gitterschwingungen und Löchern gestreut werden. Der Einfluß einer Streuung an akustischen Gitterschwingungen wird für verschiedene Werte der Deformationspotential konstanten diskutiert.
Für die Elektronenbeweglichkeit bei gemischter Streuung (an ionisierten Störstellen, optischen Gitterschwingungen und Löchern) wird eine exakte Beziehung hergeleitet. Der Gültigkeitsbereich der verwendeten Näherungsformeln wird überprüft. Für das anomale Anwachsen des Hallkoeffizienten bei hohen Temperaturen in stark dotierten Proben werden mehrere Gründe angeführt.
Experimental data for indium antimonide on the Hall-mobility of electrons and the thermal e.m.f. in a weak magnetic field are compared with theory taking into account the non-parabolicity of the conduction band. Formulae are deduced for the thermal e.m.f. and eIectron mobiTity for the case of a mixture of electron-scattering mechanisms. It is then shown from the experimental data that, in doped indium antimonide crystals, mixed scattering does occur which involves impurity ions, and optical and acoustic phonons.Es werden experimentelle Werte der Hallbeweglichkeit von Elektronen und der Thermo-EMK von Indiumantimonid in schwachen magnetischen Feldern mit dcr Theorie verglichen, wobei die Nichtparabolizitiit der Leit,ungsbander ,berucksichtigt wird. Formeln werden fur die Thermospannung und Elelitronenbeweglichkeit fur den Fall einer Mischung von Elektronenstreumechanismen abgeleitet. Mit den experimentellen Werten wird dann gezeigt, daI3 in dotierten Indiumantimonidkristallen gemischte Streuung auftritt, die Fremdionen und optische und akustische Phononen einschlieDt.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.