There a r e many Considerable discrepancies in the literature data concerning the optical properties of gallium antimonide crystals /1 to 3 / . The complexity of studying the gallium antimonide crystals i s increased by the presence of a very low second minimum of the conduction band lying only by 0.08 eV higher than the bottom of the main minimum. Below this minimum doping with various admixtures involves the formation of levels whose energetic positions substantially depend on the kind of admixture / 4 , 5/.In the present paper the dependence of the forbidden optical band gap in tellurium and selenium doped gallium antimonide crystals is studied. The investigations were carried out at 77 and 300 K.The experimental values of the forbidden optical band gap were determined from the spectral dependence of the absorption coefficient in the region of the fundamental band edge. The theoretical calculations were carried out with strict account of the influence of doping on the width of the forbidden band and the Fermi level position / 6 , 7 / .The results of comparing the experimental and the theoretically calculated valhes a r e given in Fig. 1, 2. These figures show that agreement between experiment and theory exists only at concentrations not greater than x. 5x10 17 -3 cm at 300 K and -3 7 x 1 0~~ c m at 77K. At higher concentrations the experimental dependences nium doped crystals differs quite distinctly. 25 A 1 085 -,F ' x E = f(n) greatly differ from the theoretically calculated ones. The behaviour of E O P = f(n) for tellurium and sele-O P $4 , x us 080 k Fig. 1. Dependence of Ecally calculated dependence is shown by a continuous line = f(n) for crystals doped with 0 75 tellurium (-+) and selen@m (-X-) at 77 K. The theoreti-7o17 loB 1oJ9 n (~17131-
Results are given of an investigation of the temperature and concentration dependences of the Hall mobility of holes in p-InSb crystals. The theoretical foundation of the results obtained is based on a strict account of the real structure of the valence band in indium antimonide crystals. It is shown that the experimentally obtained dependences of the Hall mobility of holes on concentration and temperature in p-InSb crystals are well explained if one assumes that the holes are scattered by acoustical phonons and ionized impurities. The scattering of holes on optical phonons in the investigated interval of concentrations and temperatures can be neglected. E s werden die Ergebnisse einer Untersuchung der Temperatur-und Konzentrationsabhangigkeiten der Hall-Beweglichkeit von Lochern in p-InSb-Kristallen mitgeteilt. Die erhaltenen Ergebnisse basieren auf einer strengen Berticksichtigung der realen Strukt u r der Valenzbander in Indiumantimonidkristallen. Es wird gezeigt, dafl die experimentell erhaltenen Abhangigkeiten der Hallbeweglichkeit der Locher von der Konzentration und Temperatur in p-TnSb-Kristallen gut e r k k r t werden konnen, wenn man annimmt, daB die Locher an akustischen Phononen und ionisierten Sterstellen gestreut werden. Die Streuung von Lochern an optischen Phononen kann im untersuchten Konzentrations-und Temperaturbereich vernachhsigt werden.
The present note reports results of a thorough research of the Moss-Burstein effect in n-type indium arsenide crystals, containing different donor admixtures.The shift of the absorption edge to shorter wavelengths with increasing doping has been repeatedly /1, 2/ observed in indium arsenide crystals. As a rule the obtained experimental results were quite well explained by means of the Kane /3/ band model with the Burstein /4/ effect taken into account.However, while studying optical /S/ and other phenomena / 6 , ?/in indium antimonide some dependence of the various effects Qn the type of the doping admixture
According to Kane' s theory (1) the valence band in Iasb has a complex structure:
The recombination radiation of GaSb crystals doped with Te, with carrier concentrations from 7 × 1017 to 2.3 × 1018 cm−3 is investigated. In a theoretical calculation the non‐equilibrium distribution of holes is taken into account, which essentially affects the form and position of the maximum of the radiation spectrum. The most heavily doped crystals are found to affect the luminescence spectrum of the L‐minima and the impurity levels, connected with them.
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